IXYS IXTA1N80, IXTP1N80 Datasheet
Advanced Technical Information
High V oltage MOSFET
IXTA 1N80
IXTP 1N80
N-Channel Enhancement Mode
Avalanche Energy Rated
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
M
d
Weight 4 g
Maximum lead temperature for soldering 30 0 °C
1.6 mm (0.062 in.) from case for 10 s
TJ= 25°C to 150°C 800 V
TJ= 25°C to 150°C; RGS = 1 MΩ 800 V
Continuous ±20 V
Transient ±30 V
TC= 25°C 750 mA
TC= 25°C, pulse width limited by T
TC= 25°C5mJ
TC= 25°C 100 mJ
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
T
≤ 150°C, RG = 47 Ω
J
TC= 25°C40W
Mounting torque 1.13/10 Nm/lb.in.
JM
, 3 V/ns
DSS
-55 ... +150 °C
-55 ... +150 °C
3A
1.0 A
150 °C
V
DSS
I
D25
R
DS(on)
TO-220AB (IXTP)
TO-263 AA (IXTA)
G = Gate, D = Drain,
S = Source, TAB = Drain
Features
= 800 V
= 750 mA
= 11
G
D
S
G
S
D (TAB)
D (TAB)
ΩΩ
Ω
ΩΩ
International standard packages
High voltage, Low R
process
DS (on)
HDMOS
TM
Rugged polysilicon gate cell structure
Fast switching times
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
© 2001 IXYS All rights reserved
VGS= 0 V, ID = 250 µA 800 V
VDS= VGS, ID = 25 µA 2.5 4.5 V
VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= V
VGS= 0 V TJ = 125°C 500 µA
VGS= 10 V, ID = 500 mA 9.5 11 Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
DSS
TJ = 25°C25µA
Applications
Switch-mode and resonant-mode
power supplies
Flyback inverters
DC choppers
High frequency matching
Advantages
Space savings
High power density
98822 (05/01)
IXTA 1N80
IXTP 1N80
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
J
VDS= 20 V; ID = 500 mA, pulse test 0.7 0.8 S
VGS= 0 V, VDS = 25 V, f = 1 MHz 23 pF
VGS= 10 V, VDS = 0.5 • V
, ID = 1A 19 ns
DSS
RG= 47Ω, (External) 40 ns
VGS= 10 V, VDS = 0.5 • V
, ID = 1A 2.5 nC
DSS
(IXTP) 0.50 K/W
min. typ. max.
220 pF
4pF
11 ns
28 ns
8.5 nC
4.5 nC
3.1 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
TO-220 AD Dimensions
Pins: 1 - Gate 2 - Drain
3 - Source 4 - Drain
Bottom Side
I
S
I
SM
V
SD
t
rr
VGS= 0 V 750 A
Repetitive; pulse width limited by T
JM
3A
IF = IS, VGS = 0 V, 1.8 2 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IF = IS, -di/dt = 100 A/µs, VR = 100 V 710 ns
TO-263 AA Outline
1. Gate
2. Drain
3. Source
4. Drain
Bottom Side
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 B SC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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