IXYS IXTN 58N50, IXTN 61N50 Service Manual
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High Current
Power MOSFET
N-Channel Enhancement Mode
Preliminary Data
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
P
D
T
J
T
JM
T
stg
V
ISOL
M
d
Weight 30 g
Symbol Test Conditions Characteristic Values
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
TJ= 25°C to 150°C 500 V
TJ= 25°C to 150°C; R
= 1.0 MΩ 500 V
GS
Continuous ±20 V
Transient ±30 V
TC = 25°C IXTN 58N50 58 A
IXTN 61N50 61 A
TC = 25°C IXTN 58N50 232 A
Pulse width limited by T
JM
IXTN 61N50 244 A
TC= 25°C 625 W
-40 ... +150 °C
150 °C
-40 ... +150 °C
50/60 Hz, RMS t = 1 minute 2500 V~
t = 1s 3000 V~
Mounting torque 1.5/13 Nm/lb.in.
Terminal connection torque (M4) 1.5/13 Nm/lb.in.
(T
= 25°C unless otherwise specified)
J
Min. Typ. Max.
VGS= 0 V, ID = 5 mA 500 V
VDS= V
, I
= 12 mA 1.7 4.0 V
GS
D
VGS= ±20 V DC, VDS = 0 ±200 nA
VDS= 0.8 V
V
GS
DSS
= 0 V TJ = 125°C 2 mA
VGS= 10 V, ID = 0.5 I
TJ = 25°C 500 µA
D25
58N50 85 mΩ
61N50 75 mΩ
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
IXTN 58N50 500 V 58 A 85
IXTN 61N50 500 V 61 A 75 m
V
DSS
I
D25
R
DS(on)
ΩΩ
m
Ω
ΩΩ
ΩΩ
Ω
ΩΩ
miniBLOC, SOT-227 B
E153432
S
G
S
D
G = Gate D = Drain
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• International standard package
• Isolation voltage 3000V (RMS)
• Low R
• Rugged polysilicon gate cell structure
HDMOSTM process
DS (on)
• Low drain-to-case capacitance
(<100 pF)
- reduced RFI
• Low package inductance (< 10 nH)
- easy to drive and to protect
• Aluminium Nitride Isolation
- increased current ratings
Applications
• DC choppers
• AC motor speed controls
• DC servo and robot drives
• Uninterruptible power supplies (UPS)
• Switched mode and resonant mode
power supplies
Advantages
• Easy to mount
• Space savings
• High power density
© 1997 IXYS All rights reserved
95501B(4/97)
IXTN 58N50
IXTN 61N50
Symbol Test Conditions Characteristic Values
(T
= 25°C unless otherwise specified)
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g
gs
gd
thJC
thCK
J
VDS= 10 V; ID = 0.5 I
, pulse test 20 30 S
D25
VGS= 0 V, VDS = 25 V, f = 1 MHz 1550 pF
VGS = 10 V, V
= 0.5 V
DS
, ID = 50 A 60 ns
DSS
RG = 1 Ω (External) 100 ns
VGS= 10 V, VDS = 0.5 V
DSS
, ID = I
Min. Typ. Max.
11000 pF
225 pF
30 ns
50 ns
420 nC
D2
55 nC
160 nC
0.05 K/W
0.20K/W
Source-Drain Diode Ratings and Characteristics
= 25°C unless otherwise specified)
(T
Symbol Test Conditions Min. Typ. Max.
J
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.1 61 0.169
D 4.09 4.29 0.1 61 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 38.00 38.23 1.496 1.505
J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.1 55 0.174
S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
I
S
I
SM
V
SD
VGS= 0 V 61 A
Repetitive; pulse width limited by T
IF = IS, V
= 0 V, 1.5 V
GS
JM
244 A
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
t
rr
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
IF = 50A, di/dt = -100 A/µs, VR = 100 V 800 ns
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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