IXYS IXTK21N100, IXTN21N100 Datasheet

High Voltage
MegaMOS

TM

FETs

IXTK 21N100 V
IXTN 21N100 I

N-Channel, Enhancement Mode

Symbol Test Conditions Maximum Ratings

IXTK IXTN

= 1000 V
= 21 A
= 0.55

D25

R

DSS

DS(on)

TO-264 AA (IXTK)

ΩΩ

Ω

ΩΩ

V

DSS

V

DGR

V

GS

V

GSM

I

D25

I

DM

P

D

T

J

T

JM

T

stg

T

L

V

ISOL

M

d

TJ= 25°C to 150°C 1000 1000 V
TJ= 25°C to 150°C; RGS = 1 MΩ 1000 1000 V

Continuous ±20 ±20 V
Transient ±30 ±30 V

TC= 25°C, Chip capability 21 21 A
TC= 25°C, pulse width limited by T

JM

84 84 A

TC= 25°C 500 520 W

-55 ... +150 °C
150 °C

-55 ... +150 °C

1.6 mm (0.063 in) from case for 10 s 300 - °C
50/60 Hz, RMS t = 1 min - 2500 V~

I

≤ 1 mA t = 1 s - 3000 V~

ISOL

Mounting torque 0.9/6 1.5/13 Nm/lb.in.
Terminal connection torque - 1.5/13 Nm/lb.in.

Weight 10 30 g

G

D

S

D (TAB)

miniBLOC, SOT-227 B
E153432

D

G

S

S

S

G

S

D

G = Gate D = Drain
S = Source TAB = Drain

Either Source terminal at miniBLOC can be used
as Main or Kelvin Source

Features

l

International standard packages

l

JEDEC TO-264, epoxy meet UL 94 V-0
flammability classification

l

miniBLOC, (ISOTOP-compatible) with
Aluminium nitride isolation

l

Low R

l

Rugged polysilicon gate cell structure

l

Low package inductance

HDMOSTM process

DS (on)

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

V

DSS

V

GH(th)

I

GSS

I

DSS

R

DS(on)

IXYS reserves the right to change limits, test conditions, and dimensions.

VGS= 0 V, ID = 6 mA 1000 V
VDS= VGS, ID = 500 µA 2 4.5 V

VGS= ±20 VDC, VDS = 0 ±200 nA
VDS= 0.8 • V

VGS= 0 V TJ = 125°C2mA

DSS

VGS= 10 V, ID = 0.5 • I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

TJ = 25°C 500 µA

D25

0.55 Ω

© 2000 IXYS All rights reserved

Applications

l

DC-DC converters

l

Synchronous rectification

l

Battery chargers

l

Switched-mode and resonant-mode
power supplies

l

DC choppers

l

Temperature and lighting controls

Advantages

l

Easy to mount

l

Space savings

l

High power density

92808I(5/97)

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IXTK 21N100
IXTN 21N100

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

g
C

C
C

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

R
R

R
R

fs

iss

oss

rss

g(on)

gs

gd

thJC

thCK

thJC

thCK

VDS= 10 V; ID = 0.5 • I

VGS= 0 V, VDS = 25 V, f = 1 MHz 630 pF

VGS= 10 V, VDS = 0.5 • V
RG = 1 Ω (External), 100 ns

VGS= 10 V, VDS = 0.5 • V

TO-264 AA 0.25 K/W
TO-264 AA 0.15 K/W

miniBLOC, SOT-227 B 0.24 K/W
miniBLOC, SOT-227 B 0.05 K/W

, pulse test 24 S

D25

8400 pF

110 pF

30 ns

, ID = 0.5 • I

DSS

D25

50 ns

40 ns

250 nC

, ID = 0.5 • I

DSS

D25

60 nC

100 nC

Source-Drain Diode Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

I

S

VGS= 0 V 21 A

TO-264 AA Outline

Dim.

Millimeter Inches

Min. Max. Min. Max.

A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033

D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072

miniBLOC, SOT-227 B

I

SM

V

SD

t

rr

I

RM

Repetitive; pulse width limited by T

JM

IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

IF = IS, -di/dt = 100 A/µs, VR = 100 V

1000 ns

20 A

84 A

M4 screws (4x) supplied

Dim. Millimeter Inches

Min. Max. Min. Max.

A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323

C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169

E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595

G 30.12 30.30 1.186 1.193
H 38.00 38.23 1.496 1.505

J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378

L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506

N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084

P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059

R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191

T 24.59 25.07 0.968 0.987
U -0.05 0. 1 -0.002 0.004

© 2000 IXYS All rights reserved

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

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