IXYS IXTM40N30, IXTH40N30, IXTH35N30 Datasheet
1 - 4
© 2000 IXYS All rights reserved
V
DSS
I
D25
R
DS(on)
IXTH 35N30 300 V 35 A 0.10
Ω Ω
Ω Ω
Ω
IXTH 40N30 300 V 40 A 0.085
ΩΩ
ΩΩ
Ω
IXTM 40N30 300 V 40 A 0.088
ΩΩ
ΩΩ
Ω
Symbol Test Conditions Maximum Ratings
V
DSS
TJ= 25°C to 150°C 300 V
V
DGR
TJ= 25°C to 150°C; RGS = 1 MΩ 300 V
V
GS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
TC= 25°C 35N30 35 A
40N30 40 A
I
DM
TC= 25°C, pulse width limited by T
JM
35N30 140 A
40N30 160 A
P
D
TC= 25°C 300 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
M
d
Mounting torque 1.13/10 Nm/lb.in.
Weight TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
TO-247 AD (IXTH)
MegaMOSTMFET
N-Channel Enhancement Mode
TO-204 AE (IXTM)
G = Gate, D = Drain,
S = Source, TAB = Drain
D
G
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
DSS
VGS= 0 V, ID = 250 µA 300 V
V
GS(th)
VDS= VGS, ID = 250 µA24V
I
GSS
VGS= ±20 VDC, VDS = 0 ±100 nA
I
DSS
VDS= 0.8 • V
DSS
TJ = 25°C 200 µA
VGS= 0 V TJ = 125°C1mA
R
DS(on)
VGS= 10 V, ID = 0.5 I
D25
IXTH35N30 0.10 Ω
IXTH40N30 0.085 Ω
IXTM40N30 0.088 Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Features
l
International standard packages
l
Low R
DS (on)
HDMOSTM process
l
Rugged polysilicon gate cell structure
l
Low package inductance (< 5 nH)
- easy to drive and to protect
l
Fast switching times
Applications
l
Switch-mode and resonant-mode
power supplies
l
Motor controls
l
Uninterruptible Power Supplies (UPS)
l
DC choppers
Advantages
l
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
l
Space savings
l
High power density
91535E(5/96)
D (TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 4
© 2000 IXYS All rights reserved
IXTH 35N30 IXTH 40N30
IXTM 40N30
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
fs
VDS= 10 V; ID = 0.5 • I
D25
, pulse test 22 25 S
C
iss
4600 pF
C
oss
VGS= 0 V, VDS = 25 V, f = 1 MHz 650 pF
C
rss
240 pF
t
d(on)
24 30 ns
t
r
VGS= 10 V, VDS = 0.5 • V
DSS
, ID = 0.5 I
D25
40 90 ns
t
d(off)
RG = 2 Ω, (External) 75 100 ns
t
f
40 90 ns
Q
g(on)
190 220 nC
Q
gs
VGS= 10 V, VDS = 0.5 • V
DSS
, ID = 0.5 I
D25
28 50 nC
Q
gd
85 105 nC
R
thJC
0.42 K/W
R
thCK
0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
VGS= 0 V 35N30 35 A
40N30 40 A
I
SM
Repetitive; 35N30 140 A
pulse width limited by T
JM
40N30 160 A
V
SD
IF = IS, VGS = 0 V, 1. 5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t
rr
IF = IS, -di/dt = 100 A/µs, VR = 100 V 40 0 ns
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 2 4 2 BSC
TO-247 AD (IXTH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 6.4 11.4 .250 .450
A1 1.53 3.42 .060 .135
∅b 1.45 1.60 .057 .063
∅D 22.22 .875
e 10.67 11.17 .420 .440
e1 5.21 5.71 .205 .225
L 11.18 12.19 .440 .480
∅p 3.84 4.19 .151 .165
∅p1 3.84 4.19 .151 .165
q 30.15 BSC 1.187 BSC
R 12.58 13.33 .495 .525
R1 3.33 4.77 .131 .188
s 16.64 17.14 .655 .675
TO-204AE (IXTM) Outline
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
Pins 1 - Gate 2 - Source
Case - Drain
1 2 3
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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