IXYS IXTK90N15 Datasheet
© 2002 IXYS All rights reserved
Advance Technical Information
Symbol Test Conditions Characteristic Values
(T
J
= 25°C unless otherwise specified) Min. Typ. Max.
V
DSS
VGS= 0 V, ID = 1 mA 150 V
V
GS(th)
VDS= VGS, I
D
= 250 µA2.04.0V
I
GSS
VGS= ±20 V DC, VDS = 0 ±100 nA
I
DSS
VDS= V
DSS
T
J
= 25°C 50 µA
VGS= 0 V TJ = 125°C 2 mA
R
DS(on)
VGS= 10 V, ID = 0.5 I
D25
16 mΩ
Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%
Features
•Low R
DS (on)
HDMOSTM process
•Rugged polysilicon gate cell structure
•International standard package
•Fast switching times
Applications
• Motor controls
• DC choppers
• Switched-mode power supplies
Advantages
• Easy to mount with one screw
(isolated mounting screw hole)
• Space savings
• High power density
98876 (01/02)
High Current
MegaMOS
TM
FET
N-Channel Enhancement Mode
Symbol Test conditions Maximum ratings
V
DSS
TJ= 25°C to 150°C 150 V
V
DGR
TJ= 25°C to 150°C; R
GS
= 1.0 MΩ 150 V
V
GS
Continuous ±20 V
V
GSM
Transient ±3 0 V
I
D25
T
C
= 25°C MOSFET chip capability 90 A
I
D(RMS)
External lead current limit 75 A
I
DM
T
C
= 25°C, pulse width limited by T
JM
360 A
I
AR
T
C
= 25°C90A
E
AR
T
C
= 25°C45mJ
E
AS
T
C
= 25°C1.5J
dv/dt I
S
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
DSS
5 V/ns
T
J
≤ 150°C, RG = 2 Ω
P
D
T
C
= 25°C 390 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6 mm (0.063 in.) from case for 10 s 300 °C
M
d
Mounting torque 0.7/6 Nm/lb.in.
Weight TO-264 10 g
TO-264 AA (IXTK)
S
G
D
D (TAB)
G = Gate D = Drain
S = Source Ta b = Drain
IXTK 90N15 V
DSS
= 150 V
I
D25
= 90 A
R
DS(on)
= 16m
ΩΩ
ΩΩ
Ω
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Symbol Test Conditions Characteristic values
(T
J
= 25°C unless otherwise specified) Min. Typ. Max.
g
fs
VDS= 10 V; ID = 0.5 I
D25
, pulse test 50 65 S
C
iss
6400 pF
C
oss
VGS = 0 V, VDS = 25 V, f = 1 MHz 1700 pF
C
rss
510 pF
t
d(on)
28 ns
t
r
VGS = 10 V, V
DS
= 0.5 V
DSS
, ID = 0.5 I
D25
30 ns
t
d(off)
R
G
= 1.5 Ω (External) 115 ns
t
f
17 ns
Q
g(on)
240 nC
Q
gs
VGS = 10 V, VDS = 0.5 V
DSS
, ID = 0.5 I
D25
55 nC
Q
gd
85 nC
R
thJC
0.30 K/W
R
thCK
0.15 K/W
Source-Drain Diode Ratings and Characteristics
(TJ = 25°C unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
I
S
V
GS
= 0V 90 A
I
SM
Repetitive; pulse width limited by T
JM
360 A
V
SD
IF = IS, V
GS
= 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t
rr
IF = 30A, -di/dt = 100 A/µs, VR = 100V 300 ns
Q
rr
6 µC
IXTK 90N15
TO-264 AA Outline
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.
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