IXYS IXTK 250N10 Service Manual

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Advance Technical Information

High Current
MegaMOS

TM

FET

IXTK 250N10 V

N-Channel Enhancement Mode

Symbol Test conditions Maximum ratings

V

DSS

V

DGR

V

GS

V

GSM

I

D25

I

D(RMS)

I

DM

I

AR

E

AR

E

AS

dv/dt I

P

D

T

J

T

JM

T

stg

T

L

M

d

Weight TO-264 10 g

TJ= 25°C to 150°C 100 V
TJ= 25°C to 150°C; R

Continuous ±20 V
Transient ±30 V

TC= 25°C MOSFET chip capability 25 0 A
External lead current limit 75 A
TC= 25°C, pulse width limited by T
TC= 25°C90A

TC= 25°C80mJ
TC= 25°C 4.0 J

≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V

S

TJ≤ 150°C, RG = 2 Ω

TC= 25°C 730 W

1.6 mm (0.063 in.) from case for 10 s 300 °C
Mounting torque 0.7/6 Nm/lb.in.

= 1.0 MΩ 100 V

GS

JM

DSS

1000 A

5 V/ns

-55 ... +150 °C
150 °C

-55 ... +150 °C

DSS

I

D25

R

DS(on)

TO-264 AA (IXTK)

G = Gate D = Drain
S = Source Tab = Drain

Features

•Low R

•Rugged polysilicon gate cell structure

= 100 V
= 250 A

= 5 m

G

D

S

HDMOSTM process

DS (on)

ΩΩ

Ω

ΩΩ

D (TAB)

•International standard package

•Fast switching times

Symbol Test Conditions Characteristic Values

(T

= 25°C unless otherwise specified) Min. Typ. Max.

J

V

DSS

V

GS(th)

I

GSS

I

DSS

R

DS(on)

© 2003 IXYS All rights reserved

VGS= 0 V, ID = 1 mA 100 V
VDS= VGS, ID = 250 µA 2.0 4.0 V
VGS= ±20 V DC, VDS = 0 ±200 nA
VDS= V

VGS= 0 V TJ = 125°C 1 mA
VGS= 10 V, ID = 90 A 5 mΩ

Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%

DSS

TJ = 25°C 50 µA

Applications

•Motor controls

•DC choppers

•Switched-mode power supplies

•DC-DC Converters

•Linear Regulators

Advantages

•Easy to mount with one screw

(isolated mounting screw hole)

•Space savings

•High power density

DS99022(03/03)

IXTK 250N10

Symbol Test Conditions Characteristic values

= 25°C unless otherwise specified) Min. Typ. Max.

(T

J

g

C
C
C

t
t
t
t

Q
Q
Q

R
R

fs

iss

oss

rss

d(on)

r

d(off)

f

g(on)

gs

gd

thJC

thCK

VDS= 10 V; ID = 90 A, pulse test 75 110 S

7800 pF

VGS = 0 V, VDS = 25 V, f = 1 MHz 3200 pF

1300 pF

35 ns

VGS = 10 V, V

= 0.5 V

DS

, ID = 90 A 40 ns

DSS

RG = 1.0 Ω (External) 120 ns

55 ns

390 nC

VGS = 10 V, VDS = 0.5 V

, ID = 0.5 I

DSS

D25

60 nC

180 nC

0.17 K/W

0.15 K/W

Source-Drain Diode Ratings and Characteristics

(TJ = 25°C unless otherwise specified)

Symbol Test Conditions Min. Typ. Max.

TO-264 AA Outline

Dim.

Millimeter Inches

Min. Max. Min. Max.

A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083

b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030

E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010

L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342

R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072

I

S

I

SM

V

SD

t

rr

Q

rr

V

= 0V 250 A

GS

Repetitive; pulse width limited by T
IF = 90 A, V

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

= 0 V, 1.2 V

GS

JM

IF = 30A, -di/dt = 100 A/µs, VR = 50 V 150 ns

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343

1000 A

2 µC