IXYS IXTK180N15 Datasheet

Advance Technical Information

High Current
MegaMOS

TM

FET

IXTK 180N15 V

N-Channel Enhancement Mode

Symbol Test conditions Maximum ratings

V

DSS

V

DGR

V

GS

V

GSM

I

D25

I

D(RMS)

I

DM

I

AR

E

AR

E

AS

dv/dt I

P

D

T

J

T

JM

T

stg

T

L

M

d

Weight TO-264 10 g

TJ= 25°C to 150°C 150 V

TJ= 25°C to 150°C; R

= 1.0 MΩ 150 V

GS

Continuous ±20 V

Transient ±3 0 V

T

= 25°C MOSFET chip capability 180 A

C

External lead current limit 75 A
T

= 25°C, pulse width limited by T

C

T

= 25°C90A

C

T

= 25°C64mJ

C

T

= 25°C3.0J

C

≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V

S

T

≤ 150°C, RG = 2 Ω

J

T

= 25°C 560 W

C

JM

DSS

720 A

5 V/ns

-55 ... +150 °C
150 °C

-55 ... +150 °C

1.6 mm (0.063 in.) from case for 10 s 300 °C

Mounting torque 0.7/6 Nm/lb.in.

= 150 V
= 180 A

= 10m

ΩΩ

Ω

ΩΩ

I

D25

R

DSS

DS(on)

TO-264 AA (IXTK)

G

D

S

G = Gate D = Drain
S = Source Ta b = Drain

D (TAB)

Features

•Low R

•Rugged polysilicon gate cell structure

HDMOSTM process

DS (on)

•International standard package

•Fast switching times

Symbol Test Conditions Characteristic Values

(T

= 25°C unless otherwise specified) Min. Typ. Max.

J

V

DSS

V

GS(th)

I

GSS

I

DSS

R

DS(on)

© 2002 IXYS All rights reserved

VGS= 0 V, ID = 1 mA 150 V

VDS= VGS, I

= 250 µA2.04.0V

D

VGS= ±20 V DC, VDS = 0 ±200 nA

VDS= V
VGS= 0 V TJ = 125°C 3 mA

VGS= 10 V, ID = 0.5 I

Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%

DSS

D25

T

= 25°C 50 µA

J

10 mΩ

Applications

• Motor controls

• DC choppers

• Switched-mode power supplies

Advantages

• Easy to mount with one screw

(isolated mounting screw hole)

• Space savings

• High power density

98878A (02/02)

IXTK 180N15

Symbol Test Conditions Characteristic values

= 25°C unless otherwise specified) Min. Typ. Max.

(T

J

g

C
C
C

t
t
t
t

Q
Q
Q

R
R

fs

iss

oss

rss

d(on)

r

d(off)

f

g(on)

gs

gd

thJC

thCK

VDS= 10 V; ID = 0.5 I

VGS = 0 V, VDS = 25 V, f = 1 MHz 2525 pF

VGS = 10 V, V

R

= 1.5 Ω (External) 180 ns

G

VGS = 10 V, VDS = 0.5 V

, pulse test 65 82 S

D25

9200 pF

950 pF

35 ns

= 0.5 V

DS

, ID = 0.5 I

DSS

D25

50 ns

50 ns

400 nC

, ID = 0.5 I

DSS

D25

70 nC

155 nC

0.15 K/W

0.22 K/W

Source-Drain Diode Ratings and Characteristics

(TJ = 25°C unless otherwise specified)

Symbol Test Conditions Min. Typ. Max.

TO-264 AA Outline

Dim.

Millimeter Inches

Min. Max. Min. Max.

A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083

b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030

E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010

L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342

R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072

I

S

I

SM

V

SD

t

rr

Q

rr

V

= 0V 180 A

GS

Repetitive; pulse width limited by T

IF = IS, V

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

= 0 V, 1.5 V

GS

JM

720 A

IF = 30A, -di/dt = 100 A/µs, VR = 100V 270 ns

6 µC

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025