IXYS IXTK 140N20P Service Manual
查询IXTK140N20P供应商
Advanced Technical Information
PolarHT
TM
IXTK 140N20P
Power MOSFET
N-Channel Enhancement Mode
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GSM
I
D25
I
D(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight 10 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
TJ= 25°C to 175°C 200 V
TJ= 25°C to 175°C; RGS = 1 MΩ 200 V
±20 V
TC= 25°C 140 A
External lead current limit 75 A
TC= 25°C, pulse width limited by T
JM
280 A
TC= 25°C60A
TC= 25°C 100 mJ
TC= 25°C4J
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
, 10 V/ns
DSS
TJ≤ 150°C, RG = 4 Ω
TC= 25°C 800 W
-55 ... +175 °C
175 °C
-55 ... +150 °C
1.6 mm (0.062 in.) from case for 10 s 300 °C
Mounting torque 1.13/10 Nm/lb.in.
V
I
D25
R
DSS
DS(on)
= 200 V
= 140 A
= 18m
TO-264(SP) (IXTK)
G
D
S
G = Gate D = Drain
S = Source TAB = Drain
(TAB)
Features
z
International standard packages
z
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
- easy to drive and to protect
Advantages
z
Easy to mount
z
Space savings
z
High power density
ΩΩ
Ω
ΩΩ
V
V
I
I
DSS
GS(th)
GSS
DSS
VGS= 0 V, ID = 250 µA 200 V
VDS= VGS, ID = 500µA 2.5 5.0 V
VGS= ±20 VDC, VDS = 0 ±200 nA
VDS= V
DSS
VGS= 0 V TJ = 150°C 250 µA
R
DS(on)
VGS= 10 V, ID = 0.5 I
V
= 15 V, ID = 140A 14 mΩ
GS
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2004 IXYS All rights reserved
D25
25 µA
18 mΩ
PolarHTTM DMOS transistors
utilize proprietary designs and
process. US patent is pending.
DS99194(07/04)
IXTK 140N20P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
VDS= 10 V; ID = 0.5 I
, pulse test 50 84 S
D25
7500 pF
VGS = 0 V, VDS = 25 V, f = 1 MHz 1800 pF
280 pF
30 ns
VGS = 10 V, VDS = 0.5 V
, ID = 60 A 35 ns
DSS
RG = 3.3 Ω (External) 150 ns
90 ns
240 nC
VGS= 10 V, VDS = 0.5 V
, ID = 0.5 I
DSS
D25
50 nC
100 nC
0.18 K/W
0.15 K/W
Source-Drain Diode Characteristic Values
(T
Symbol Test Conditions Min. typ. Max.
= 25°C, unless otherwise specified)
J
TO-264(SP) Outline (IXTK)
I
S
I
SM
V
SD
VGS = 0 V 140 A
Repetitive 280 A
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t
rr
IF = 25 A 120 ns
-di/dt = 100 A/µs
Q
RM
VR = 100 V 3.5 µC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463
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