IXYS IXTH8P50, IXTH7P50 Datasheet
V
DSS
I
D25
R
DS(on)
Standard Power MOSFET
P-Channel Enhancement Mode
IXTH 7P50 -500V -7 A 1.5 Ω
IXTH 8P50
-500V -8 A 1.2 Ω
Avalanche Rated
Symbol Test Conditions Maximum Ratings
T
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
P
D
T
J
T
JM
T
stg
T
L
= 25°C to 150°C -500 V
J
T
= 25°C to 150°C; RGS = 1 MΩ -500 V
J
Continuous ±20 V
Transient ±30 V
T
= 25°C 7P50 -7 A
C
T
= 25°C, pulse width limited by T
C
T
= 25°C 7P50 -7 A
C
T
= 25°C30mJ
C
T
= 25°C 180 W
C
8P50 -8 A
7P50 -28 A
J
8P50 -32 A
8P50 -8 A
-55 ... +150 °C
150 °C
-55 ... +150 °C
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
TO-247 AD
G = Gate, D = Drain,
S = Source, TAB = Drain
Features
•International standard package
JEDEC TO-247 AD
•Low R
•Rugged polysilicon gate cell structure
•Unclamped Inductive Switching (UIS)
M
d
Weight 6g
Mounting torque 1.13/10 Nm/lb.in.
rated
•Low package inductance (<5 nH)
- easy to drive and to protect
HDMOSTM process
DS (on)
D (TAB)
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
© 2001 IXYS All rights reserved
VGS= 0 V, I
BV
DSS
VDS= VGS, I
V
GS(th)
V
GS
D
Temperature Coefficient 0.054 %/K
D
Temperature Coefficient -0.122 %/K
= ±20 V
VDS= 0.8 V
VGS= 0 V T
VGS= -10 V, ID = 0.5 I
R
Temperature Coefficient 0.6 %/K
DS(on)
J
= -250 µA -500 V
= -250 µA -3.0 -5.0 V
, V
= 0 ±100 nA
DC
DS
T
DSS
D25
= 25 °C -200 µA
J
= 125°C-1mA
J
7P50 1.5 Ω
8P50 1.2 Ω
min. typ. max.
Applications
•High side switching
•Push-pull amplifiers
•DC choppers
•Automatic test equipment
Advantages
•Easy to mount with 1 screw
(isolated mounting screw hole)
•Space savings
•High power density
94534E (6/01)
IXTH 7P50
IXTH 8P50
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCS
J
VDS= -10 V; ID = I
, pulse test 4 5 S
D25
VGS= 0 V, VDS = -25 V, f = 1 MHz 450 pF
VGS= -10 V, VDS = 0.5 V
R
= 4.7 Ω (External) 35 ns
G
VGS= -10 V, VDS = 0.5 V
DSS ID
DSS ID
= 0.5 I
= 0.5 I
min. typ. max.
3400 pF
175 pF
33 ns
D25
27 ns
35 ns
130 nC
D25
32 nC
64 nC
0.25 K/W
0.7 K/W
Source-Drain Diode Characteristic Values
(T
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
J
TO-247 AD Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
2.2 2.54 .087 .102
1
A
2.2 2.6 .059 .098
2
b 1.0 1.4 .040 .055
b
1.65 2.13 .065 .084
1
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6. 15 BSC 242 BSC
I
S
I
SM
V
SD
t
rr
VGS= 0 7P50 -7 A
8P50 -8 A
Repetitive; pulse width limited by TJM7P50 -28 A
8P50 -32 A
IF = IS, VGS = 0 V, -3 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IF = I
, di/dt = 100 A/µs 400 ns
S
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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