IXYS IXTH 88N15 Service Manual
Advance Technical Information
High Current
Power MOSFET
IXTH 88N15 V
IXTT 88N15 I
N-Channel Enhancement Mode
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight TO-247 AD 6 g
TJ= 25°C to 150°C 150 V
TJ= 25°C to 150°C; RGS = 1 MΩ 150 V
Continuous ±20 V
Transient ±30 V
TC= 25°C88A
TC= 25°C, pulse width limited by T
JM
352 A
TC= 25°C88A
TC= 25°C50mJ
TC= 25°C 1.5 J
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
≤ 150°C, RG = 2 Ω
T
J
, 5 V/ns
DSS
TC= 25°C 400 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
1.6 mm (0.062 in.) from case for 10 s 300 °C
Mounting torque 1.13/10 Nm/lb.in.
TO-268 4 g
= 150 V
= 88 A
= 22 m
R
DSS
D25
DS(on)
TO-247 AD (IXTH)
TO-268 (IXTT) Case Style
G
S
G = Gate D = Drain
S = Source TAB = Drain
Features
z
International standard packages
z
Low R
z
Rugged polysilicon gate cell structure
z
Unclamped Inductive Switching (UIS)
HDMOSTM process
DS (on)
rated
z
Low package inductance
- easy to drive and to protect
ΩΩ
Ω
ΩΩ
(TAB)
(TAB)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
V
V
I
I
R
GS(th)
GSS
DSS
DSS
DS(on)
VGS= 0 V, ID = 250 µA 150 V
VDS= VGS, ID = 250µA 2.0 4.0 V
VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= V
V
VGS= 10 V, ID = 0.5 I
DSS
= 0 V TJ = 125°C1mA
GS
D25
TJ = 25°C25µA
22 m Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2003 IXYS All rights reserved
Advantages
z
Easy to mount
z
Space savings
z
High power density
DS99034(04/03)
IXTH 88N15
IXTT 88N15
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
VDS= 10 V; ID = 0.5 I
, pulse test 35 48 S
D25
4000 pF
VGS = 0 V, VDS = 25 V , f = 1 M H z 1150 pF
440 pF
24 ns
VGS= 10 V, VDS = 0.5 V
, ID = 0.5 I
DSS
D25
33 ns
RG= 2 Ω (External) 80 ns
18 ns
170 nC
VGS= 10 V, VDS = 0.5 V
, ID = 0.5 I
DSS
D25
40 nC
105 nC
0.31 K/W
(TO-247) 0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
VGS = 0 V 88 A
Repetitive 352 A
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
TO-247 AD Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
TO-268 Outline
3 - Source Tab - Drain
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
2.2 2.54 .087 .102
1
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1.65 2.13 .065 .084
1
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
T
rr
IF = 25A
-di/dt = 100 A/µs
Q
RM
V
= 100V
R
Min Recommended Footprint
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
150
2.5
ns
µC
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
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