IXYS IXTK 74 N20, IXTH 68 N20 Service Manual
查询IXTH68N20供应商
High Current
MegaMOSTMFET
N-Channel Enhancement Mode
Preliminary data
Symbol Test conditions Maximum ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
P
D
T
J
T
JM
T
stg
M
d
Weight TO-264 10 g
TJ= 25°C to 150°C 200 V
TJ= 25°C to 150°C; R
= 1.0 MΩ 200 V
GS
Continuous ±20 V
Transient ±30 V
TC= 25°C 74N20 74 A
68N20 68 A
TC= 25°C, pulse width limited by T
74N20 296 A
JM
68N20 272 A
TC= 25°C 74N20 416 W
68N20 300 W
Mounting torque 1.13/10 Nm/lb.in.
TO-247 6 g
IXTK 74 N20 200 V 74 A 35 mW
IXTH 68 N20 200 V 68 A 35 mW
-55 ... +150 °C
150 °C
-55 ... +150 °C
V
DSS
I
D25
TO-247AD (IXTH)
TO-264 AA (IXTK)
G
D
S
G = Gate D = Drain
S = Source Tab = Drain
Features
R
DS(on)
D (TAB)
D (TAB)
Max lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Symbol Test Conditions Characteristic Values
= 25°C unless otherwise specified) Min. Typ. Max.
(T
J
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
IXYS reserves the right to change limits, test conditions and dimensions.
VGS= 0 V, ID = 5 mA 200 V
VDS= VGS, ID = 4 mA 2.0 4.0 V
VGS= ±20 V DC, VDS = 0 ±100 nA
VDS= 0.8 V
VGS= 0 V TJ = 125°C 3 mA
VGS= 10 V, ID = 0.5 I
Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%
DSS
D25
T
= 25°C 500 µA
J
35 mΩ
C2 - 14
Low R
Rugged polysilicon gate cell structure
HDMOSTM process
DS (on)
International standard package
Fast switching times
Applications
Motor controls
DC choppers
Uninterruptable Power Supplies (UPS)
Switch-mode and resonant-mode
Advantages
Easy to mount with one screw
(isolated mounting screw hole)
Space savings
High power density
95512C (12/97)
© 1998 IXYS All rights reserved
IXTH 68N20
IXTK 74N20
Symbol Test Conditions Characteristic values
= 25°C unless otherwise specified) Min. Typ. Max.
(T
J
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
thJC
thCK
VDS= 10 V; ID = 0.5 I
VGS = 0 V, VDS = 25 V, f = 1 MHz 1275 pF
VGS = 10 V, V
R
= 1 Ω (External) 180 ns
G
VGS = 10 V, VDS = 0.5 V
, pulse test 35 42 S
D25
5450 pF
630 pF
30 ns
= 0.5 V
DS
, ID = 0.5 I
DSS
D25
230 ns
50 ns
300 nC
, ID = 0.5 I
DSS
D25
75 nC
100 nC
TO-264 AA 0.30 K/W
0.15 K/W
TO-247 AD 0.35 K/W
0.15 K/W
TO-247 AD (IXTH) Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
2.2 2.54 .087 .102
1
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1.65 2.13 .065 .084
1
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
C2
Source-Drain Diode Ratings and Characteristics
(TJ = 25°C unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
I
S
I
SM
V
SD
t
rr
V
= 0 74N20 74 A
GS
Repetitive; pulse width limited by T
IF = IS, V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
= 0 V, 1.5 V
GS
68N20 68 A
74N20 296 A
JM
68N20 272 A
IF = IS, -di/dt = 100 A/µs, VR = 100V 600 ns
TO-264 AA Outline
Dim.
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
© 1998 IXYS All rights reserved
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
C2 - 15
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