IXYS IXTM50N20, IXTH50N20 Datasheet
MegaMOSTMFET
N-Channel Enhancement Mode
IXTH 50N20 V
IXTM 50N20 I
R
DSS
D25
DS(on)
= 200 V
= 50 A
= 45 m
ΩΩ
Ω
ΩΩ
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
P
D
T
J
T
JM
T
stg
M
d
TJ= 25°C to 150°C 200 V
TJ= 25°C to 150°C; RGS = 1 MΩ 200 V
Continuous ±20 V
Transient ±30 V
TC= 25°C50A
TC= 25°C, pulse width limited by T
JM
200 A
TC= 25°C 300 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
Mounting torque 1.13/10 Nm/lb.in.
Weight TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
V
I
I
R
GSS
DSS
DSS
GS(th)
DS(on)
VGS= 0 V, ID = 250 µA 200 V
VDS= VGS, ID = 250 µA24V
VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= 0.8 • V
VGS= 0 V TJ = 125°C1mA
VGS= 10 V, ID = 0.5 I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
DSS
D25
TJ = 25°C 200 µA
0.045 Ω
TO-247 AD (IXTH)
D (TAB)
TO-204 AE (IXTM)
G
D
G = Gate, D = Drain,
S = Source, TAB = Drain
Features
l
International standard packages
l
Low R
l
Rugged polysilicon gate cell structure
l
Low package inductance (< 5 nH)
HDMOSTM process
DS (on)
- easy to drive and to protect
l
Fast switching times
Applications
l
Switch-mode and resonant-mode
power supplies
l
Motor controls
l
Uninterruptible Power Supplies (UPS)
l
DC choppers
Advantages
l
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
l
Space savings
l
High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
91534F(5/97)
1 - 4
IXTH 50N20
IXTM 50N20
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
C
C
C
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
R
R
fs
iss
oss
rss
g(on)
gs
gd
thJC
thCK
VDS= 10 V; ID = 0.5 • I
VGS= 0 V, VDS = 25 V, f = 1 MHz 800 pF
VGS= 10 V, VDS = 0.5 • V
RG = 2 Ω, (External) 72 90 ns
VGS= 10 V, VDS = 0.5 • V
, pulse test 20 32 S
D25
4600 pF
285 pF
18 25 ns
, ID = 0.5 I
DSS
D25
15 20 ns
16 25 ns
190 220 nC
, ID = 0.5 I
DSS
D25
35 50 nC
95 110 nC
0.42 K/W
0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
VGS= 0 V 50N20 50 A
Repetitive; 200 A
pulse width limited by T
JM
IF = IS, VGS = 0 V, 1 .5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
TO-247 AD (IXTH) Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
2.2 2.54 .087 .102
1
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1.65 2.13 .065 .084
1
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-204AE (IXTM) Outline
t
rr
IF = IS, -di/dt = 100 A/µs, VR = 100 V 400 ns
© 2000 IXYS All rights reserved
Pins 1 - Gate 2 - Source
Dim. Millimeter Inches
Min. Max. Min. Max.
A 6.4 11.4 .250 .450
A1 1.53 3.42 .060 .135
∅b 1.45 1.60 .057 .063
∅D 22.22 .875
e 10.67 11.17 .420 .440
e1 5.21 5.71 .205 .225
L 11.18 12.19 .440 .480
∅p 3.84 4.19 .151 .165
∅p1 3.84 4.19 .151 .165
q 30.15 BSC 1.187 BSC
R 12.58 13.33 .495 .525
R1 3.33 4.77 .131 .188
s 16.64 17.14 .655 .675
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Case - Drain
2 - 4
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