IXYS IXTH36P10 Datasheet
Advance Technical Information
Standard Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
Symbol Test Conditions Maximum Ratings
T
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight 6g
= 25°C to 150°C -100 V
J
T
= 25°C to 150°C; RGS = 1 MΩ -100 V
J
Continuous ±20 V
Transient ±30 V
T
= 25°C -36 A
C
T
= 25°C, pulse width limited by T
C
T
= 25°C -36 A
C
T
= 25°C30mJ
C
T
= 25°C 180 W
C
J
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque 1.13/10 Nm/lb.in.
IXTH 36P10
-144 A
-55 ... +150 °C
150 °C
-55 ... +150 °C
V
DSS
I
D25
R
DS(on)
TO-247 AD
G = Gate, D = Drain,
S = Source, TAB = Drain
Features
• International standard package
JEDEC TO-247 AD
• Low R
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance (<5 nH)
- easy to drive and to protect
= -100 V
= -36 A
= 75m
HDMOSTM process
DS (on)
ΩΩ
Ω
ΩΩ
D (TAB)
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
© 2002 IXYS All rights reserved
VGS= 0 V, I
VDS= VGS, I
V
GS
D
D
= ±20 V
VDS= 0.8 V
VGS= 0 V T
VGS= -10 V, ID = 0.5 I
J
= -250 µA -100 V
= -250 µA -3.0 -5.0 V
, V
= 0 ±100 nA
DC
DS
T
DSS
D25
= 25 °C -25 µA
J
= 125°C-1mA
J
min. typ. max.
75 mΩ
Applications
• High side switching
• Push-pull amplifiers
• DC choppers
• Automatic test equipment
Advantages
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Space savings
• High power density
98908 (2/02)
IXTH 36P10
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCS
J
VDS= -10 V; ID = I
, pulse test 6 12 S
D25
VGS= 0 V, VDS = -25 V, f = 1 MHz 1100 pF
VGS= -10 V, VDS = 0.5 V
R
= 4.7 Ω (External) 65 ns
G
VGS= -10 V, VDS = 0.5 V
, ID = 0.5 I
DSS
, ID = 0.5 I
DSS
min. typ. max.
2800 pF
490 pF
35 ns
D25
37 ns
28 ns
95 nC
D25
27 nC
40 nC
0.65 K/W
0.25 K/W
Source-Drain Diode Characteristic Values
(T
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
J
TO-247 AD Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1.65 2.13 .065 .084
1
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.1 5 BSC 24 2 BSC
I
S
I
SM
V
SD
t
rr
VGS= 0 -36 A
Repetitive; pulse width limited by T
JM
-144 A
IF = IS, VGS = 0 V, -3 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IF = I
, di/dt = 100 A/µs, V
S
= -50 V 180 ns
R
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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