IXYS IXTH30N50, IXTH30N45 Datasheet
© 1997 IXYS All rights reserved
94569D(5/97)
Preliminary Data Sheet
MegaMOSTMFET
N-Channel Enhancement Mode
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
V
DSS
VGS= 0 V, ID = 5 mA 30N50 500 V
30N45 450 V
BV
DSS
temperature coefficient .087 %/k
V
GS(th)
VDS= VGS, ID = 250µA24V
V
GS(th)
temperature coefficient -0.25 %/k
I
GSS
VGS= ±20 VDC, VDS = 0 ±100 nA
I
DSS
VDS= 0.8 • V
DSS
TJ = 25°C 200 µA
V
GS
= 0 V TJ = 125°C3mA
R
DS(on)
VGS= 10 V, ID = 0.5 I
D25
30N50 0.17 Ω
30N45 0.16 Ω
Pulse test, t ≤ 300 µ s, duty cycle d ≤ 2 %
Features
• International standard package
JEDEC TO-247 AD
• Low R
DS (on)
HDMOSTM process
• Rugged polysilicon gate cell structure
• High commutating dv/dt rating
• Fast switching times
Applications
• Switch-mode and resonant-mode
power supplies
• Motor control
• Uninterruptible Power Supplies (UPS)
• DC choppers
Advantages
• Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
• Space savings
• High power density
Symbol Test Conditions Maximum Ratings
30N45 450 V
V
DSS
TJ= 25°C to 150°C 30N50 500 V
30N45 450 V
V
DGR
TJ= 25°C to 150°C; RGS = 1 MΩ 30N50 500 V
V
GS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
TC= 25°C30A
I
DM
TC= 25°C, pulse width limited by T
JM
120 A
P
D
TC= 25°C 360 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6 mm (0.063 in) from case for 10 s 300 °C
M
d
Mounting torque 1.13/10 Nm/lb.in.
Weight 6g
TO-247 AD
G = Gate, D = Drain,
S = Source, TAB = Drain
*Add suffix letter "S" for TO-247 SMD
package option (EX:IXTH30N50S)
D (TAB)
V
DSS
I
D25
R
DS(on)
IXTH 30N45 450 V 30 A 0.16 Ω
IXTH 30N50 500 V 30 A 0.17 Ω
TO-247 SMD
G
E
C (TAB)
( ...S )
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH30N45 IXTH30N50
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
g
fs
VDS= 10 V; ID = 0.5 • I
D25
, pulse test 18 28 S
C
iss
5680 pF
C
oss
VGS= 0 V, VDS = 25 V, f = 1 MHz 635 pF
C
rss
240 pF
t
d(on)
35 ns
t
r
VGS= 10 V, VDS = 0.5 • V
DSS
, ID = 0.5 I
D25
42 ns
t
d(off)
RG = 1 Ω, (External) 110 ns
t
f
26 ns
Q
g(on)
227 nC
Q
gs
VGS= 10 V, VDS = 0.5 • V
DSS
, ID = 0.5 I
D25
29 nC
Q
gd
110 nC
R
thJC
0.35 K/W
R
thCK
0.15 K/W
Source-Drain Diode Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
VGS= 0 30 A
I
SM
Repetitive; pulse width limited by T
JM
120 A
V
SD
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t
rr
IF = IS, -di/dt = 100 A/µs, VR = 100 V 850 ns
∅ P
e
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b
2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-247 AD Outline
1. Gate
2. Collector
3. Emitter
4. Collector
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A1 2.29 2.54 .090 .100
A2 1.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b1 1.91 2.13 .075 .084
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 4.90 5.10 .193 .201
L1 2.70 2.90 .106 .114
L2 2.10 2.30 .083 .091
L3 0.00 0.10 .00 .004
L4 1.90 2.10 .075 .083
ØP 3.55 3.65 .140 .144
Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190
S 6.15 BSC .242 BSC
TO-247 SMD Outline
Loading...