IXYS IXTH30N25 Datasheet
© 2001 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
V
DSS
TJ= 25°C to 150°C 250 V
V
DGR
TJ= 25°C to 150°C; RGS = 1 MΩ 250 V
V
GS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
TC= 25°C30A
I
DM
TC= 25°C, pulse width limited by T
JM
120 A
I
AR
30 A
E
AR
TC= 25°C30mJ
E
AS
T
C
= 25°C 1.0 J
dv/dt I
S
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
DSS
, 5 V/ns
TJ≤ 150°C, RG = 2 Ω
P
D
TC= 25°C 200 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
M
d
Mounting torque 1.13/10 Nm/lb.in.
Weight 6g
Maximum lead temperature for soldering 30 0 °C
1.6 mm (0.062 in.) from case for 10 s
TO-247 AD
N-Channel Enhancement Mode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
DSS
VGS= 0 V, ID = 250 µA 250 V
V
GS(th)
VDS= VGS, ID = 250 µA24V
I
GSS
VGS= ±20 VDC, VDS = 0 ±100 nA
I
DSS
VDS= V
DSS
25 µA
VGS= 0 V TJ = 125°C 250 µA
R
DS(on)
VGS= 10 V, ID = 15 A 55 75 mΩ
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
G = Gate, D = Drain,
S = Source, TAB = Drain
Features
l
International standard package
JEDEC TO-247 AD
l
Low R
DS (on)
HDMOSTM process
l
Rugged polysilicon gate cell structure
l
High commutating dv/dt rating
l
Fast switching times
Applications
l
Switch-mode and resonant-mode
power supplies
l
Motor controls
l
Uninterruptible Power Supplies (UPS)
l
DC choppers
Advantages
l
Easy to mount with 1 screw
(isolated mounting screw hole)
l
Space savings
l
High power density
D (TAB)
98872 (12/01)
St andard
Power MOSFET
IXTH 30N25
V
DSS
= 250 V
I
D (cont)
= 30 A
R
DS(on)
= 75 m
ΩΩ
ΩΩ
Ω
Advance Technical Information
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH 30N25
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
g
fs
VDS= 10 V; ID = 15 A, pulse test 24 32 S
C
iss
3950 pF
C
oss
VGS= 0 V, VDS = 25 V, f = 1 MHz 510 pF
C
rss
177 pF
t
d(on)
19 ns
t
r
VGS= 10 V, VDS = 0.5 • V
DSS
, ID = 30A 19 ns
t
d(off)
RG = 3.6 Ω (External) 79 ns
t
f
17 ns
Q
g(on)
136 nC
Q
gs
VGS= 10 V, VDS = 0.5 • V
DSS
, ID = 0.5 I
D25
32 nC
Q
gd
52 nC
R
thJC
0.65 K/W
R
thCK
0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
VGS= 0 V 30 A
I
SM
Repetitive; pulse width limited by T
JM
120 A
V
SD
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t
rr
IF = IS, -di/dt = 100 A/µs, VR = 100 V 300 ns
Q
rr
3.0 µC
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-247 AD Outline
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
1 2 3
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