IXYS IXTH 15N70 Service Manual
查询IXTH15N70供应商
IXTH 15N70 V
MegaMOSTMFET I
R
N-Channel Enhancement Mode
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
P
D
T
J
T
JM
T
stg
M
d
TJ= 25°C to 150°C 700 V
TJ= 25°C to 150°C; RGS = 1 MΩ 700 V
Continuous ±20 V
Transient ±30 V
TC= 25°C15A
TC= 25°C, pulse width limited by T
JM
60 A
TC= 25°C 300 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
Mounting torque 1.13/10 Nm/lb.in.
Weight 6g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
VGS= 0 V, ID = 250 µA 700 V
VDS= VGS, ID = 250 µA 2 4.5 V
VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= 0.8 • V
V
= 0 V TJ = 125°C1mA
GS
VGS= 10 V, ID = 0.5 • I
Pulse test, t ≤ 300 µ s, duty cycle d ≤ 2 %
DSS
J
TJ = 25°C 200 µA
D25
min. typ. max.
0.45 Ω
TO-247 AD
G = Gate, D = Drain,
S = Source, TAB = Drain
Features
●
●
●
●
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Applications
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●
●
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Advantages
●
●
●
DSS
D (cont)
DS(on)
= 700 V
= 15 A
= 0.45
ΩΩ
Ω
ΩΩ
D (TAB)
International standard package
JEDEC TO-247 AD
Low R
HDMOSTM process
DS (on)
Rugged polysilicon gate cell structure
High commutating dv/dt rating
Fast switching times
Switch-mode and resonant-mode
power supplies
Motor controls
Uninterruptible Power Supplies (UPS)
DC choppers
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
94503C(5/96)
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030 Fax: +49-6206-503629
IXTH 15N70
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
J
VDS= 10 V; ID = 0.5 I
, pulse test 11 18 S
D25
VGS= 0 V, VDS = 25 V, f = 1 MHz 420 pF
VGS= 10 V, VDS = 0.5 • V
, ID = 0.5 I
DSS
RG = 2 Ω, (External) 70 90 ns
VGS= 10 V, VDS = 0.5 • V
, ID = 0.5 I
DSS
min. typ. max.
4500 pF
140 pF
20 40 ns
D25
43 60 ns
40 60 ns
150 170 nC
D25
29 40 nC
60 85 nC
0.42 K/W
0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
VGS= 0 V 15 A
Repetitive; pulse width limited by T
JM
60 A
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
TO-247 AD Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
2.2 2.54 .087 .102
1
A
2.2 2.6 .059 .098
2
b 1.0 1.4 .040 .055
b
1.65 2.13 .065 .084
1
2.87 3.12 .113 .123
b
2
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
t
rr
IF = IS, -di/dt = 100 A/µs, VR = 100 V 600 ns
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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