IXYS IXTC75N10 Datasheet
ADVANCE TECHNICAL INFORMATION
MegaMOSTMFET
IXTC 75N10 V
N-Channel Enhancement Mode
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
P
D
T
J
T
JM
T
stg
M
d
Weight 2g
T
= 25°C to 150°C 100 V
J
T
= 25°C to 150°C; RGS = 1 MΩ 100 V
J
ISOPLUS 220
Continuous ±20 V
Transient ±30 V
T
= 25°C72A
C
T
= 25°C, pulse width limited by T
C
T
= 25°C 230 W
C
JM
300 A
-55 ... +150 °C
150 °C
-55 ... +150 °C
Mounting torque 1.13/10 Nm/lb.in.
DSS
I
D25
R
DS(on)
G = Gate, D = Drain,
S = Source
* Patent pending
= 100 V
= 72 A
= 20 m
TM
G
D
S
Isolated back surface*
ΩΩ
Ω
ΩΩ
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
V
V
I
I
R
DSS
GS(th)
GSS
DSS
DS(on)
J
VGS= 0 V, I
VDS= VGS, I
V
= ±20 V
GS
VDS= 0.8 V
VGS= 0 V T
VGS= 10 V, ID = I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 0.020 Ω
= 250 µA 100 V
D
= 250 µA24V
D
, V
= 0 ±100 nA
DC
DS
T
DSS
T
= 25°C 200 µA
J
= 125°C1mA
J
min. typ. max.
Features
l
International standard packages
l
Low R
l
Rugged polysilicon gate cell structure
l
Low package inductance (< 5 nH)
HDMOSTM process
DS (on)
- easy to drive and to protect
l
Fast switching times
Applications
l
Switch-mode and resonant-mode
power supplies
l
Motor controls
l
Uninterruptible Power Supplies (UPS)
l
DC choppers
Advantages
l
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
l
Space savings
l
High power density
© 2002 IXYS All rights reserved
98881 (1/2)
IXTC 75N10
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
J
VDS= 10 V; ID = IT, pulse test 25 30 S
VGS = 0 V, VDS = 25 V, f = 1 MHz 1300 pF
VGS = 10 V, VDS = 0.5 V
R
= 2 Ω, (External) 100 140 ns
G
VGS = 10 V, VDS = 0.5 V
DSS
DSS
, ID = I
, ID = I
min. typ. max.
T
T
4500 pF
550 pF
40 60 ns
60 110 ns
30 60 ns
180 260 nC
30 70 nC
90 160 nC
0.54 K/W
0.30 K/W
Source-Drain Diode Characteristic Values
(T
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
VGS= 0 V 75 A
Repetitive; pulse width limited by T
IF = IS, VGS = 0 V, 1.75 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
J
JM
300 A
ISOPLUS220 OUTLINE
Note: All terminals are solder plated.
1 - Gate
2 - Drain
3 - Source
t
rr
IF = I
, -di/dt = 100 A/µs, V
S
= 100 V 300 ns
R
Note: 1. IT = 37.5A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Loading...