IXYS IXTC 26N50P Service Manual
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Advanced Technical Information
PolarHV
TM
Power MOSFET
IXTC 26N50P
V
I
D25
R
Electrically Isolated Tab,
N-Channel Enhancement Mode,
Avalanche Rated
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
TJ= 25°C to 150°C 500 V
TJ= 25°C to 150°C; RGS = 1 MΩ 500 V
Continuous ±20 V
Transient ±30 V
TC= 25°C13A
TC= 25°C, pulse width limited by T
JM
78 A
TC= 25°C26A
TC= 25°C40mJ
TC= 25°C 1.0 J
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
, 10 V/ns
DSS
TJ≤ 150°C, RG = 4 Ω
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
F
C
TC= 25°C 100 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
1.6 mm (0.062 in.) from case for 10 s 300 °C
50/60 Hz, RMS, t = 1, leads-to-tab 2500 V~
Mounting Force 11..65/2.5..15 N/lb
Weight 2g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
V
V
I
I
DSS
GS(th)
GSS
DSS
VGS= 0 V, ID = 250 µA 500 V
VDS= VGS, ID = 250µA 2.5 5.0 V
VGS= ±30 VDC, VDS = 0 ±100 nA
VDS= V
DSS
25 µA
VGS= 0 V TJ = 125°C 250 µA
ISOPLUS220
G
G = Gate D = Drain
S = Source
Features
z
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z
Low drain to tab capacitance(<30pF)
Applications
z
DC-DC converters
z
Battery chargers
z
Switched-mode and resonant-mode
power supplies
z
DC choppers
z
AC motor control
Advantages
z
Easy assembly
z
Space savings
z
High power density
DSS
= 500 V
=13 A
DS(on)
E153432
D
= 260 m
TM
S
(IXTC)
Isolated Tab
ΩΩ
Ω
ΩΩ
R
DS(on)
VGS= 10 V, ID = I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2004 IXYS All rights reserved
T
260 mΩ
DS99227(10/04)
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
J
Min. Typ. Max.
3600 pF
48 pF
20 ns
T
25 ns
20 ns
96 nC
T
20 nC
45 nC
1.25 K/W
0.21 K/W
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
(T
VDS= 10 V; ID = T , pulse test 20 28 S
VGS = 0 V, VDS = 25 V, f = 1 MHz 380 pF
VGS = 10 V, VDS = 0.5 V
DSS
, ID = I
RG = 4 Ω (External) 58 ns
VGS= 10 V, VDS = 0.5 V
DSS
, ID = I
IXTC 26N50P
ISOPLUS220 Outline
Source-Drain Diode Characteristic Values
(T
Symbol Test Conditions Min. typ. Max.
I
S
I
SM
V
SD
VGS = 0 V 26 A
Repetitive 78 A
IF = IS, VGS = 0 V, 1.5 V
= 25°C, unless otherwise specified)
J
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t
rr
IF = 25 A 400 ns
-di/dt = 100 A/µs
Q
RM
Note: Test Current I
VR = 100 V 5.0 µC
= 13A
T
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463
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