查询IXTA 3N120供应商
High Voltage
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight TO-220 4 g
TJ= 25°C to 150°C 1200 V
TJ= 25°C to 150°C; RGS = 1 MΩ 1200 V
Continuous ±20 V
Transient ±30 V
TC= 25°C3A
TC= 25°C, pulse width limited by T
TC= 25°C3A
TC= 25°C 20mJ
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
≤ 150°C, RG = 2 Ω
T
J
TC= 25°C 200 W
1.6 mm (0.063 in) from case for 10 s 300 °C
Mounting torque (TO-220) 1.13/10 Nm/lb.in.
TO-263 2 g
IXTA 3N120
IXTP 3N120
JM
, 5 V/ns
DSS
-55 to +150 °C
150 °C
-55 to +150 °C
12 A
700 mJ
V
DSS
1200 V 3 A 4.5
I
D25
R
DS(on)
ΩΩ
Ω
ΩΩ
TO-220 (IXTP)
G
D
S
D (TAB)
TO-263 (IXTA)
G
S
D (TAB)
G = Gate D = Drain
S = Source TAB = Drain
Features
z
International standard packages
z
Low R
z
DS (on)
Rated for unclamped Inductive load
Switching (UIS)
z
Molding epoxies meet UL 94 V-0
flammability classification
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
© 2004 IXYS All rights reserved
VGS= 0 V, ID = 1 mA 1200 V
VDS= VGS, ID = 250 µA 2.0 5.0 V
VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= 0.8 V
VGS= 0 V TJ = 125°C1mA
VGS= 10 V, ID = 0.5 I
Note 1
DSS
D25
TJ = 25°C25µA
4.5 Ω
Advantages
z
Easy to mount
z
Space savings
z
High power density
DS98844E(02/04)
IXTA 3N120
IXTP 3N120
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
VDS= 20 V; ID = 0.5 • I
VGS= 0 V, VDS = 25 V, f = 1 MHz 110 135 pF
VGS= 10 V, VDS = 0.5 • V
RG = 4.7 Ω (External), 32 ns
VGS= 10 V, VDS = 0.5 • V
(TO-220) 0.25 K/W
, Note 1 1.5 2.6 S
D25
1100 1350 pF
40 60 pF
17 ns
, ID = 0.5 • I
DSS
D25
15 ns
18 ns
42 nC
, ID = 0.5 • I
DSS
D25
8nC
21 nC
0.62 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
TO-220 (IXTP) Outline
Pins: 1 - Gate 2 - Drain
3 - Source 4 - Drain
Bottom Side
I
S
I
SM
V
SD
t
rr
VGS= 0 V 3 A
Repetitive; pulse width limited by T
JM
IF = IS, VGS = 0 V, Note 1 1.5 V
IF = IS, -di/dt = 100 A/µs, VR = 100 V 700 n s
Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
12 A
TO-263 (IXTA) Outline
1. Gate
2. Drain
3. Source
4. Drain
Bottom Side
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 B SC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
IXTA 3N120
d
d
IXTP 3N120
Fig. 1. Output Characteristics
@ 25 Deg. C
3
2.5
2
1. 5
- Amperes
D
I
1
0.5
0
024681012
V
= 1 0V
G S
7V
VDS - Volts
6V
5V
Fig. 3. Output Characteristics
@ 125 Deg. C
3
2.5
2
1. 5
- Amperes
D
I
1
0.5
0
0 5 10 15 2 0 2 5
V
= 1 0V
G S
7V
VDS - Volts
5V
6V
Fig. 2. Extended Output Characteristics
@ 25 deg. C
7
6
5
4
3
- Amperes
D
I
2
1
0
0 5 10 15 20 25 30
Fig. 4. R
Nor malized to I
DS(on)
V
G S
VDS - Volts
= 1 0V
D25
Junction Temperature
2.8
2.5
V
= 1 0V
G S
2.2
1. 9
1. 6
- Normalize
1. 3
D S (on )
1
R
0.7
0.4
-50 -25 0 25 50 75 100 125 150
I D = 3A
I D = 1 .5A
TJ - Degr ees Ce nt ig r ade
7V
6V
5V
Value vs.
Fig. 5. R
2.8
V
= 1 0V
2.5
2.2
1. 9
1. 6
- Normalize
1. 3
D S (on )
R
0.7
G S
1
0123 4567
Normalized to I
DS(on)
Value vs. I
TJ = 1 25ºC
D
T
= 25ºC
D25
3.5
2.5
1. 5
- Amperes
D
I
0.5
I D - Amperes
Fig. 6. Dr ain Cur rent vs. Case
T emperature
3
2
1
0
-50 -25 0 25 50 75 100 125 150
TC - Degrees Centigrade
© 2004 IXYS All rights reserved
IXTA 3N120
F
IXTP 3N120
Fig. 7. Input Admittance
6
5
4
3
- Amperes
D
I
TJ = 1 20ºC
2
1
0
3.5 4 4.5 5 5.5 6 6.5
25
-40
º
C
º
C
VGS - Volts
Fig. 9. Source Current vs. Source-To-Drain
Voltage
9
8
7
6
5
4
- Amperes
S
I
3
2
1
0
0.4 0.5 0.6 0.7 0.8 0.9
TJ = 1 25ºC
TJ = 25ºC
VSD - Volts
Fig. 8. Transconductance
8
7
TJ = -40ºC
6
5
4
- Siemens
3
f s
g
2
1
0
0 1.5 3 4.5 6 7.5 9
25
1 25
º
C
º
C
I D - Amperes
Fig. 10. Gate Charge
10
V
= 600V
D S
= 1 .5A
I
8
6
- Volts
4
G S
V
2
0
D
= 1 0mA
I
G
0 8 16 24 32 40 48
Q G - nanoCoulombs
Fig. 11. Capacitance
10000
f = 1 MHz
C
iss
1000
C
oss
10 0
Capacitance - p
C
rss
10
0 5 10 15 20 25 30 35 40
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
VDS - Volts
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
Fig. 12. Maxi mum T ransient T herm al
Resistance
0.7
0.6
0.5
0.4
(ºC/W)
-
0.3
(th) J C
R
0.2
0.1
0
1 10 100 1000
Pulse Width - millisec onds
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