IXYS IXTP1N100, IXTA1N100 Datasheet
Advanced Technical Information
High Voltage
MOSFET
IXTA 1N100
IXTP 1N100
N-Channel Enhancement Mode
Avalanche Energy Rated
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
M
d
Weight 4 g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
TJ= 25°C to 150°C 1000 V
TJ= 25°C to 150°C; RGS = 1 MΩ 1000 V
Continuous ±20 V
Transient ±30 V
TC= 25°C 1.5 A
TC= 25°C, pulse width limited by T
TC= 25°C6mJ
TC= 25°C 200 mJ
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
TJ≤ 150°C, RG = 18 Ω
TC= 25°C54W
Mounting torque 1.13/10 Nm/lb.in.
JM
, 3 V/ns
DSS
-55 ... +150 °C
-55 ... +150 °C
6A
1.5 A
150 °C
V
DSS
I
D25
R
DS(on)
TO-220AB (IXTP)
G
TO-263 AA (IXTA)
G = Gate, D = Drain,
S = Source, TAB = Drain
Features
= 1000 V
= 1.5 A
D (TAB)
ΩΩ
Ω
ΩΩ
= 11
D
S
G
S
D (TAB)
International standard packages
High voltage, Low R
process
DS (on)
HDMOS
TM
Rugged polysilicon gate cell structure
Fast switching times
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
VGS= 0 V, ID = 250 µA 1000 V
VDS= VGS, ID = 25 µA 2.5 4.5 V
VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= V
VGS= 0 V TJ = 125°C 500 µA
VGS= 10 V, ID = 1.0A 11 Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
DSS
TJ = 25°C25µA
Applications
Switch-mode and resonant-mode
power supplies
Flyback inverters
DC choppers
High frequency matching
Advantages
Space savings
High power density
98545A (11/99)
1 - 2
IXTA 1N100
IXTP 1N100
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
C
C
C
t
d(on)
t
t
d(off)
t
f
Q
Q
Q
R
R
fs
iss
oss
rss
r
g(on)
gs
gd
thJC
thCK
VDS= 20 V; ID = 1.0A, pulse test 0.8 1.5 S
480 pF
VGS= 0 V, VDS = 25 V, f = 1 MHz 45 pF
15 pF
18 ns
VGS= 10 V, VDS = 0.5 • V
, ID = 1A 19 ns
DSS
RG= 18Ω, (External) 20 ns
18 ns
23 nC
VGS= 10 V, VDS = 0.5 • V
, ID = 1A 4.5 nC
DSS
14 nC
2.3 K/W
(IXTP) 0.50 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
VGS= 0 V 1.5 A
Repetitive; pulse width limited by T
JM
6A
IF = IS, VGS = 0 V, 1.8 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
TO-263 AA (IXTA) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
TO-220 AB (IXTP) Outline
t
rr
IF = IS, -di/dt = 100 A/µs, VR = 100 V 710 ns
© 2000 IXYS All rights reserved
Dim. Millimeter Inches
Min. Max. Min. Max.
A 12.70 13.97 0.500 0.550
B 14.73 16.00 0.580 0.630
C 9.91 10.66 0.390 0.420
D 3.54 4.08 0.139 0.161
E 5.85 6.85 0.230 0.270
F 2.54 3.18 0.100 0.125
G 1.15 1.65 0.045 0.065
H 2.79 5.84 0.110 0.230
J 0.64 1.01 0.025 0.040
K 2.54 BSC 0.100 BSC
M 4.32 4.82 0.170 0.190
N 1.14 1.39 0.045 0.055
Q 0.35 0.56 0.014 0.022
R 2.29 2.79 0.090 0.110
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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