IXYS IXSH35N120B, IXST35N120B Datasheet

IGBT

IXSH 35N120B
IXST 35N120B

I

C25

V

CES

= 70 A
= 1200 V

"S" Series - Improved SCSOA Capability

Symbol Test Conditions Maximum Ratings

V

CES

V

CGR

V

GES

V

GEM

I

C25

I

C90

I

CM

SSOA V
(RBSOA) Clamped inductive load @ 0.8 V

t

SC

P

C

T

J

T

JM

T

stg

M

d

Maximum lead temperature for soldering 300 °C

1.6 mm (0.062 in.) from case for 10 s

Weight TO-247 6 g

Symbol Test Conditions Characteristic Values

BV

CES

V

GE(th)

I

CES

I

GES

V

CE(sat)

T

= 25°C to 150°C 1200 V

J

T

= 25°C to 150°C; RGE = 1 MΩ 1200 V

J

Continuous ±20 V
Transient ±30 V

T

= 25°C70A

C

T

= 90°C35A

C

T

= 25°C, 1 ms 140 A

C

= 15 V, T

GE

T

= 125°C, V

J

T

= 25°C 300 W

C

= 125°C, RG = 5 Ω I

J

= 720 V; VGE = 15 V, R

CE

= 22 Ω 10 µs

G

= 90 A

CM

CES

-55 ... +150 °C
150 °C

-55 ... +150 °C

Mounting torque (TO-247) 1.13/10 Nm/lb.in.

TO-268 4 g

(T

= 25°C, unless otherwise specified)

J

min. typ. max.

IC= 1.0 mA, VGE = 0 V 1200 V

I

= 250 µA, V

C

VCE= 0.8 V
Note 1 T

VCE= 0 V, V

IC= I

C90, VGE

Note 2 T

= V

CE

GE

T

CES

= ±20 V ±100 nA

GE

= 15 V T

= 25°C50µA

J

= 125°C 2.5 mA

J

= 25°C 3.6 V

J

= 125°C 2.9 V

J

36V

V

CE(sat)

= 3.6 V

TO-247 AD (IXSH)

(TAB)

G

C

E

TO-268 ( IXST)

G

E

(TAB)

G = Gate C = Collector
E = Emitter TAB = Collector

Features

l

Epitaxial Silicon drift region

- fast switching

- small tail current

l

MOS gate turn-on for drive simplicity

Applications

• AC motor speed control

• DC servo and robot drives

• Uninterruptible power supplies (UPS)

• Switched-mode and resonant-mode

power supplies

• DC choppers

© 2002 IXYS All rights reserved

98669B (01/02)

IXSH 35N120B
IXST 35N120B

Symbol Test Conditions Characteristic Values

(T

= 25°C, unless otherwise specified)

g

C
C
C

Q
Q
Q

t
t
t

t
E

t
t
E
t

t
E

R
R

fs

ies

oes

res

g

ge

gc

d(on)

ri

d(off)
fi

off

d(on)

ri

on

d(off)
fi

off

thJC

thCK

J

IC= I
Note 2

; VCE = 10 V, 16 23 S

C90

VCE = 25 V, VGE = 0 V, f = 1 MHz 260 pF

IC= I

Inductive load, TJ = 25

IC = I
R
V
Note 3

Inductive load, TJ = 125

I

C

R
Note 3

, VGE = 15 V, VCE = 0.5 V

C90

, VGE = 15 V

C90

= 5 Ω

G

= 0.8 V

CE

= I

= 5 Ω, V

G

CES

, VGE = 15 V

C90

CE

= 0.8 V

CES

°°

°C

°°

°°

°C

°°

CES

(TO-247) 0.25 K/W

min. typ. max.

3600 pF

75 pF

120 nC

33 nC

49 nC

36 ns

27 ns

160 300 ns
180 300 ns

59mJ

38 ns

29 ns

2.5 mJ

240 ns
340 ns

9mJ

0.42 K/W

TO-247 AD Outline (IXSH)

1 = Gate
2 = Collector
3 = Emitter
Tab = Collector

TO-268 Outline (IXST)

Notes: 1. Device must be heatsunk for high temperature leakage current

measurements to avoid thermal runaway.

2. Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %

3. Switching times may increase for V
increased RG.

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1

(Clamp) > 0.8 V

CE

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

, higher TJ or

CES

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.9 5.1 .193 .201

2.7 2.9 .106 .114

A

1

A2.02 .25 .001 .010
b 1.15 1.45 .045 .057

b

1.9 2.1 .75 .83

2

C .4 .65 .016 .026
D 13.80 14.00 .543 .551

E 15.85 16.05 .624 .632
E

13.3 13.6 .524 .535

1

e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106

L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045

L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161