IXYS IXSH15N120BD1, IXST15N120BD1 Datasheet

HIGH V oltage IGBT
with Diode

IXSH 15N120BD1
IXST 15N120BD1

"S" Series - Improved SCSOA Capability

Preliminary data

I

C25

V

CES

V

CE(sat)

= 30 A
= 1200 V
= 3.4 V

Symbol Test Conditions Maximum Ratings

V

CES

V

CGR

V

GES

V

GEM

I

C25

I

C90

I

CM

SSOA V
(RBSOA) Clamped inductive load @ 0.8 V

t

SC

P

C

T

J

T

JM

T

stg

M

d

TJ= 25°C to 150°C 1200 V
TJ= 25°C to 150°C; RGE = 1 MW 1200 V

Continuous ±20 V
Transient ±30 V

TC= 25°C30A
TC= 90°C15A
TC= 25°C, 1 ms 60 A

= 15 V, TJ = 125°C, RG = 10 W ICM = 40 A

GE

CES

TJ = 125°C, VGE = 720 V; VGE = 15 V, RG = 10 W 10 ms
Non repetitive

TC= 25°C 150 W

-55 ... +150 °C
150 °C

-55 ... +150 °C

Mounting torque (TO-247) 1.13/10 Nm/lb.in.

Maximum lead temperature for soldering 300 °C

1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering (TO-268) 260 °C
Weight TO-247 6 g

TO-268 4 g

TO-247 AD (IXSH)

(TAB)

G

C

E

TO-268 ( IXST)

G

E

(TAB)

Features

• High Blocking Voltage

• Epitaxial Silicon drift region

- fast switching

- small tail current

- low switching losses

• MOS gate turn-on for drive simplicity

• Molding epoxies meet UL 94 V-0
flammability classification

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

BV

CES

V

GE(th)

I

CES

I

GES

V

CE(sat)

IXYS reserves the right to change limits, test conditions, and dimensions.

IC= 1.0 mA, VGE = 0 V 1200 V
IC= 250 mA, VCE = V

VCE= 0.8 • V
Note 1 TJ = 125°C 2.5 mA

CES

GE

36V

50 mA

VCE= 0 V, VGE = ±20 V ±100 nA
IC = I

Note 2 TJ = 125°C 2.8 V

= 15 V 3.0 3.4 V

C90, VGE

© 2000 IXYS All rights reserved

Applications

• AC motor speed control

• DC servo and robot drives

• Uninterruptible power supplies (UPS)

• Switched-mode and resonant-mode

power supplies

• DC choppers

98708A (7/00)

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IXSH 15N120BD1
IXST 15N120BD1

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

g

C
C
C

Q
Q
Q

t

d(on)

t
t

t
E

t

d(on)

t
E
t

t
E

R
R

fs

ies

oes

res

g

ge

gc

ri

d(off)
fi

off

ri

on

d(off)
fi

off

thJC

thCK

IC= I
Note 2

VCE = 25 V, VGE = 0 V, f = 1 MHz 120 pF

IC= I

Inductive load, TJ = 25°C

IC = I
RG = 10 W
VCE = 0.8 V
Note 3

Inductive load, TJ = 125°C

IC = I
RG = 10 W, VCE = 0.8 V
Note 3

(TO-247) 0.25 K/W

; VCE = 10 V, 7 9.5 S

C90

1400 pF

37 pF
57 nC

, VGE = 15 V, VCE = 0.5 V

C90

CES

14 nC
25 nC

30 ns

, VGE = 15 V

C90

25 ns

148 300 ns

CES

126 250 ns

1.5 2.9 mJ
30 ns

, VGE = 15 V

C90

CES

25 ns

2.6 mJ

265 ns
298 ns

3.1 mJ

0.83 K/W

TO-247 AD (IXSH) Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845

C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144

E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244

G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177

J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433

L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031

N 1.5 2.49 0.087 0.102

TO-268AA (D3 PAK)

Reverse Diode (FRED) Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

IF = I

V

F

I

RM

t

rr

R

thJC

, VGE = 0 V TJ = 150OC 1.7 V

C90

Note 2 TJ = 25OC 2.5 V
IF = 30A; VGE = 0 V; TJ = 100°C 5.5 A

VR = 100 V; -diF/dt = 100 A/ms
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V TJ =25°C30 ns

0.9 K/W

Notes: 1. Device must be heatsunk for high temperature leakage current measurements to

avoid thermal runaway.

2. Pulse test, t £ 300 ms, duty cycle £ 2 %

3. Switching times may increase for VCE (Clamp) > 0.8 • V

, higher TJ orincreased RG.

CES

Min. Recommended Footprint

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.9 5.1 .193 .201
A

2.7 2.9 .106 .114

1

A2.02 .25 .001 .010
b 1.15 1.45 .045 .057

1.9 2.1 .75 .83

b

2

C .4 .65 .016 .026
D 13.80 14.00 .543 .551

E 15.85 16.05 .624 .632
E

13.3 13.6 .524 .535

1

e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106

L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161

© 2000 IXYS All rights reserved

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

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