IXYS IXSR40N60CD1 Datasheet

IGBT with Diode
ISOPLUS247

(Electrically Isolated Backside)

Short Circuit SOA Capability

Preliminary data

TM

IXSR 40N60CD1 V

I

V
t

CES

C25

CE(SAT)

fi(typ)

= 600 V

= 62 A

= 2.5 V
= 70 ns

Symbol Test Conditions Maximum Ratings

V

CES

V

CGR

V

GES

V

GEM

I

C25

I

C90

I

CM

SSOA V
(RBSOA) Clamped inductive load, L = 30 mH @ 0.8 V

t

SC

(SCSOA) RG = 22 W, non repetitive
P

C

T

J

T

JM

T

stg

V

ISOL

TJ= 25°C to 150°C 600 V
TJ= 25°C to 150°C; RGE = 1 MW 600 V

Continuous ±20 V
Transient ±30 V

TC= 25°C, limited by leads 62 A
TC= 90°C37A
TC= 25°C, 1 ms 150 A

= 15 V, TVJ = 125°C, RG = 22 W ICM = 80 A

GE

CES

VGE= 15 V, VCE = 360 V, TJ = 125°C 10ms

TC= 25°C 210 W

-55 ... +150 °C
150 °C

-55 ... +150 °C

50/60 Hz, RMS t = 1 min 2500 V~

Maximum lead temperature for soldering 300 °C

1.6 mm (0.062 in.) from case for 10 s

Weight PLUS247 5 g

ISOPLUS 247

TM

(IXSR)

E 153432

G

C

E

Isolated backside*

G = Gate, C = Collector,
E = Emitter

* Patent pending

Features

• DCB Isolated mounting tab

• Meets TO-247AD package Outline

• High current handling capability

• Latest generation HDMOS

TM

process

• MOS Gate turn-on

- drive simplicity

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

BV

CES

V

GE(th)

I

CES

I

GES

V

CE(sat)

IXYS reserves the right to change limits, test conditions, and dimensions.

IC= 1 mA, VGE = 0 V 600 V
IC= 4 mA, VCE = V

VCE= 0.8 • V
VGE= 0 V TJ = 150°C5mA

GE

CES

47V

650 mA

VCE= 0 V, VGE = ±20 V ±100 nA
IC= IT , VGE = 15 V 2.5 V

© 2000 IXYS All rights reserved

Applications

• Uninterruptible power supplies (UPS)

• Switched-mode and resonant-mode
power supplies

• AC motor speed control

• DC servo and robot drives

• DC choppers

Advantages

• Easy assembly

• High power density

• Very fast switching speeds for high
frequency applications

98673A (7/00)

1 - 2

IXSR 40N60CD1

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

g

C
C
C

Q
Q
Q

t
t
t
t
E

t
t
E
t
t

E
R

R

fs

ies

oes

res

g

ge

gc

d(on)

ri

d(off)

fi

off

d(on)

ri

on

d(off)

fi

off

thJC

thCK

IC = IT; VCE = 10 V, 16 23 S
Pulse test, t £ 300 ms, duty cycle £ 2 %

3700 pF

VGS = 0 V, V

25 V, = f = 1 MHz 440 pF

DS ,

60 pF

190 nC

IC = IT, VGE = 15 V, VCE = 0.5 V

CES

45 nC
88 nC

Inductive load, TJ = 25°C

IC = IT, VGE = 15 V, L = 100 mH,
VCE = 0.8 V

, RG = R

CES

= 2.7 W

off

Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • V
higher TJ or increased R

G

Inductive load, TJ = 125°C

I

= IT, VGE = 15 V, L = 100 mH

C

VCE = 0.8 V

, RG = R

CES

= 2.7 W

off

Remarks: Switching times may
increase for V
higher TJ or increased R

(Clamp) > 0.8 • V

CE

G

CES

CES

,

,

50 ns
50 ns
70 140 ns
70 120 ns

1.0 1.7 mJ
50 ns

50 ns

2.2 mJ

140 ns
140 ns

1.7 mJ

0.6 K/W

0.15 K/W

ISOPLUS 247 (IXSR) OUTLINE

1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.83 5.21 .190 .205
A

2.29 2.54 .090 .100

1

A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055

1.91 2.13 .075 .084

b

1

b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031

D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635

e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170

Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190

S 13.21 13.72 .520 .540
T 15.75 16.26 .620 .640
U 1.65 3.03 .065 .080

Reverse Diode (FRED) Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.
V

F

I

RM

t

rr

R

thJC

IF= IT, VGE = 0 V, 1.8 V
Pulse test £ 300 ms, duty cycle d £ 2 %

IF= IT, VGE = 0 V, -diF/dt = 100 A/ms 2 2.5 A
VR= 100 V
IF= 1 A; -di/dt = 200 A/ms; VR = 30 V 35 ns

1.15 K/W

Note: 1. IT = 40A

© 2000 IXYS All rights reserved

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

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