IXYS IXSR40N60BD1 Datasheet
Advanced T echnical Information
IGBT with Diode
ISOPLUS 247
TM
IXSR 40N60BD1
(Electrically Isolated Backside)
Short Circuit SOA Capability
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA V
(RBSOA) Clamped inductive load, L = 30 mH @ 0.8 V
t
SC
(SCSOA) RG = 22 W, non repetitive
P
C
T
J
T
JM
T
stg
TJ= 25°C to 150°C 600 V
TJ= 25°C to 150°C; RGE = 1 MW 600 V
Continuous ±20 V
Transient ±30 V
TC= 25°C70A
TC= 90°C40A
TC= 25°C, 1 ms 150 A
= 15 V, TVJ = 125°C, RG = 22 W ICM = 80 A
GE
CES
VGE= 15 V, VCE = 360 V, TJ = 125°C 10ms
TC= 25°C 170 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
V
CES
I
C25
V
CE(sat)
t
fi(typ)
ISOPLUS 247
E 153432
G = Gate, C = Collector,
E = Emitter
* Patent pending
Features
= 600 V
= 70 A
= 2.2 V
= 120 ns
TM
G
C
E
Isolated backside*
V
ISOL
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Weight 5g
Symbol Test Conditions Characteristic Values
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
50/60 Hz, RMS t = 1 min leads-to housing 2500 V~
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC= 1 mA, VGE = 0 V 600 V
IC= 4 mA, VCE = V
VCE= 0.8 • V
VGE= 0 V TJ = 150°C5mA
VCE= 0 V, VGE = ±20 V ±100 nA
IC= IT, VGE = 15 V 2.2 V
CES
GE
TJ = 25°C 650 mA
47V
• DCB Isolated mounting tab
• Meets TO-247AD package Outline
• High current handling capability
• Latest generation HDMOS
• MOS Gate turn-on
- drive simplicity
Applications
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
• AC motor speed control
• DC servo and robot drives
• DC choppers
Advantages
• Easy assembly
• High power density
• Very fast switching speeds for high
frequency applications
TM
process
98672 (07/00)
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IXSR 40N60BD1
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
fs
iss
oss
rss
g
ge
gc
d(on)
ri
d(off)
fi
off
d(on)
ri
on
d(off)
fi
off
thJC
thCK
IC= IT; VCE = 10 V, 16 23 S
Pulse test, t £ 300 ms, duty cycle £ 2 %
3700 pF
VGS = 0 V, VDS = 25 V, f = 1 MHz 440 p F
60 pF
190 nC
IC = IT, VGE = 15 V, VCE = 0.5 V
CES
45 nC
88 nC
Inductive load, TJ = 25°C
I
= IT, VGE = 15 V, L = 100 mH,
C
VCE = 0.8 V
, RG = 2.7 W
CES
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • V
increased R
G
, higher TJ or
CES
Inductive load, TJ = 125°C
IC = IT, VGE = 15 V, L = 100 mH
V
= 0.8 V
CE
, RG = 2.7 W
CES
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • V
increased R
G
, higher TJ or
CES
50 ns
50 ns
110 200 ns
120 200 ns
1.8 2.6 mJ
50 ns
50 ns
2.2 mJ
190 ns
180 ns
2.6 mJ
0.73 K/W
0.15 K/W
ISOPLUS 247 (IXSR) OUTLINE
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A
2.29 2.54 .090 .100
1
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
1.91 2.13 .075 .084
b
1
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190
S 13.21 13.72 .520 .540
T 15.75 16.26 .620 .640
U 1.65 3.03 .065 .080
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
V
F
I
RM
t
rr
R
thJC
IF = IT, VGE = 0 V, 1.8 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IF = IT, VGE = 0 V, -diF/dt = 100 A/ms 2 2.5 A
VR = 100 V
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V 35 ns
1.15 K/W
Note: 1. IT = 40A
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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