IXYS IXSR35N120BD1 Datasheet
IGBT with Diode
ISOPLUS 247
TM
IXSR 35N120BD1
(Electrically Isolated Backside)
Short Circuit SOA Capability
V
CES
I
C25
V
CE(sat)
t
fi(typ)
= 1200 V
= 70 A
= 3.6 V
= 160 ns
Symbol Test Conditions Maximum Ratings
ISOPLUS 247
T
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA V
(RBSOA) Clamped inductive load, L = 30 µH @ 0.8 V
t
SC
(SCSOA) RG = 22 Ω, non repetitive
P
C
T
J
T
JM
T
stg
V
ISOL
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Weight 5g
= 25°C to 150°C 1200 V
J
T
= 25°C to 150°C; RGE = 1 MΩ 1200 V
J
Continuous ±20 V
Transient ±30 V
T
= 25°C70A
C
T
= 90°C30A
C
T
= 25°C, 1 ms 140 A
C
= 15 V, T
GE
VGE= 15 V, VCE = 720 V, T
TC= 25°C IGBT 250 W
= 125°C, RG = 22 Ω I
VJ
= 125°C 10µs
J
= 90 A
CM
CES
G = Gate, C = Collector,
E = Emitter
* Patent pending
Diode 150 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
50/60 Hz, RMS t = 1 min leads-to housing 2500 V~
Features
l
l
l
l
l
TM
E 153432
G
C
E
Isolated backside*
DCB Isolated mounting tab
Meets TO-247AD package outline
High current handling capability
Latest generation HDMOSTM process
MOS Gate turn-on
- drive simplicity
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
J
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
Q Device must be heatsunk for high temperature measurements to avoid thermal runaway.
IXYS reserves the right to change limits, test conditions and dimensions
© 2002 IXYS All rights reserved
IC= 3 mA, VGE = 0 V 1200 V
I
= 250 µA, V
C
VCE= 0.8 V
VGE= 0 V T
VCE= 0 V, V
I
= I
C
T, VGE
= V
CE
GE
T
CES
= ±20 V ±100 nA
GE
= 25°C1mA
J
= 150°C3mA
J
= 15 V 3.6 V
min. typ. max.
36V
Applications
l
Uninterruptible power supplies (UPS)
l
Switched-mode and resonant-mode
power supplies
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
Advantages
l
Easy assembly
l
High power density
98741A (01/02)
IXSR 35N120BD1
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
fs
iss
oss
rss
g
ge
gc
d(on)
ri
d(off)
fi
off
d(on)
ri
on
d(off)
fi
off
thJC
thCK
J
I
= I
; VCE = 10 V, 16 23 S
C
T
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
VGS = 0 V, VDS = 25 V, f = 1 MHz 315 p F
I
= I
C
Inductive load, TJ = 25
I
= I
C
VCE = 0.8 V
= 15 V, VCE = 0.5 V
T, VGE
= 15 V, L = 100 µH,
T, VGE
CES
, R
G
°°
°C
°°
= 2.7 Ω
CES
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 V
increased R
G
Inductive load, TJ = 125
I
= I
C
VCE = 0.8 V
= 15 V, L = 100 µH
T, VGE
, R
CES
G
= 2.7 Ω
, higher TJ or
CES
°°
°C
°°
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 V
increased R
G
, higher TJ or
CES
min. typ. max.
3600 pF
75 pF
120 nC
33 nC
49 nC
36 ns
27 ns
160 300 ns
180 300 ns
59mJ
38 ns
29 ns
6mJ
240 ns
340 ns
9mJ
0.5 K/W
0.15 K/W
ISOPLUS 247 OUTLINE
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A
2.29 2.54 .090 .100
1
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b
1.91 2.13 .075 .084
1
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190
Reverse Diode (FRED) Characteristic Values
(T
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
V
F
I
RM
t
rr
R
thJC
I
= I
F
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.85
= 0 V, 2.75 V
T, VGE
I
= I
F
VR = 100 V
I
= 1 A; -di/dt = 200 A/µs; V
F
T, VGE
= 0 V, -di
J
/dt = 100 A/µs 7 14.3 A
F
= 30 V 40 ns
R
0.83 K/W
Note: 1. IT = 35A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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