IXYS IXSA15N120B, IXSP15N120B Datasheet

Advance Technical Information

HIGH Voltage IGBT

IXSA 15N120B
IXSP 15N120B

"S" Series - Improved SCSOA Capability

Symbol Test Conditions Maximum Ratings

V

CES

V

CGR

V

GES

V

GEM

I

C25

I

C90

I

CM

SSOA V
(RBSOA) Clamped inductive load @ 0.8 V

t

SC

P

C

T

J

T

JM

T

stg

M

d

Maximum lead temperature for soldering 300 °C

1.6 mm (0.062 in.) from case for 10 s

Maximum tab temperature for soldering (TO-263) 260 °C

Weight TO-220 4 g

T

= 25°C to 150°C 1200 V

J

T

= 25°C to 150°C; RGE = 1 MΩ 1200 V

J

Continuous ±20 V
Transient ±30 V

T

= 25°C30A

C

T

= 90°C15A

C

T

= 25°C, 1 ms 60 A

C

= 15 V, T

GE

T

= 125°C, V

J

Non repetitive

T

= 25°C 150 W

C

= 125°C, RG = 10 Ω I

J

= 720 V; VGE = 15 V, R

GE

= 10 Ω 10 µs

G

= 40 A

CM

CES

-55 ... +150 °C
150 °C

-55 ... +150 °C

Mounting torque (TO-247) 1.13/10 Nm/lb.in.

TO-263 2 g

V

CES

I

C25

V

CE(sat)

=1200 V
= 30 A
= 3.4 V

TO-220AB (IXSP)

G

C

E

C (TAB)

TO-263 AA (IXSA)

G

E

C (TAB)

Features

•International standard packages

JEDEC TO-220AB and TO-263AA

•Low switching losses, low V

(sat)

•MOS Gate turn-on

- drive simplicity

Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

BV
V

I

CES

I

GES

V

CES

GE(th)

CE(sat)

IC= 250 µA, VGE = 0 V 1200 V
IC= 250 µA, VCE = V

VCE = V

CES

= 0 V TJ = 125°C 2.5 mA

V

GE

GE

TJ = 25°C50µA

36V

VCE= 0 V, VGE = ±20 V ±100 nA
IC= I

, VGE = 15 3.0 3.4 V

CE90

TJ = 125°C 2.8 V

© 2002 IXYS All rights reserved

Applications

•AC motor speed control

•DC servo and robot drives

•DC choppers

•Uninterruptible power supplies (UPS)

•Switch-mode and resonant-mode

power supplies

Advantages

•Easy to mount with one screw

•Reduces assembly time and cost

•High power density

98922 (5/02)

IXSA 15N120B
IXSP 15N120B

Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

g

fs

IC= I

; VCE = 10 V, 7 9.5 S

C90

Note2

C
C

C

Q
Q
Q

t
t
t
t
E

t
t
E
t
t
E

ies

oes

res

g

ge

gc

d(on)

ri

d(off)

fi

off

d(on)

ri

on

d(off)

fi

off

VCE = 25 V, VGE = 0 V, f = 1 MHz 98 pF

IC= I

Inductive load, TJ = 25

I

C

VCE= 960 V, RG = R

, VGE = 15 V, VCE = 0.5 V

C90

= I

, VGE = 15 V

C90

= 10 Ω

off

°°

°C

°°

CES

Note3

= 10 Ω

off

°°

°C

°°

Inductive load, TJ = 125

IC= I

, VGE = 15 V

C90

VCE= 960 V, RG = R
Note3

1400 pF

37 pF

57 nC
14 nC
25 nC

30 ns

25 ns
148 280 ns
160 320 ns

1.75 3.0 mJ
30 ns

25 ns

1.1 mJ
265 ns
298 ns

3.1 mJ

TO-220 AB Dimensions

Pins: 1 - Gate 2 - Collector

3 - Emitter 4 - Collector

Bottom Side

R

thJC

R

thCK

TO-220 0.5 K/W

0.83 K/W

TO-263 AA Outline

Notes: 1. Device must be heatsunk for high temperature leakage current

measurements to avoid thermal runaway.

2. Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %

3. Switching times may increase for VCE (Clamp) > 0.8 V
increased RG.

Min. Recommended Footprint

(Dimensions in inches and mm)

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1

, higher TJ or

CES

1. Gate

2. Collector

3. Emitter

4. Collector

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110

b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055

c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055

D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320

E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 B SC .100 B SC

L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015

R 0.46 0.74 .018 .029

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

Bottom Side