IXYS IXSN80N60BD1 Datasheet
Advance Technical Information
IGBT with Diode IXSN 80N60BD1 V
Short Circuit SOA Capability I
V
C
G
E
SymbolSymbol
Symbol
SymbolSymbol
VV
V
VV
CESCES
CES
CESCES
VV
V
VV
CGRCGR
CGR
CGRCGR
VV
V
VV
GESGES
GES
GESGES
VV
V
VV
GEMGEM
GEM
GEMGEM
II
I
II
C25C25
C25
C25C25
II
I
II
C90C90
C90
C90C90
II
I
II
CMCM
CM
CMCM
SSOASSOA
SSOA V
SSOASSOA
(RBSOA)(RBSOA)
(RBSOA) Clamped inductive load @ 0.8 V
(RBSOA)(RBSOA)
tt
t
tt
SCSC
SC
SCSC
(SCSOA)(SCSOA)
(SCSOA) RG = 22 Ω, non repetitive
(SCSOA)(SCSOA)
PP
P
PP
CC
C
CC
VV
V
VV
ISOLISOL
ISOL
ISOLISOL
TT
T
TT
JJ
J
JJ
TT
T
TT
JMJM
JM
JMJM
TT
T
TT
stgstg
stg
stgstg
MM
M
MM
dd
d
dd
WeightWeight
Weight 30 g
WeightWeight
SymbolSymbol
Symbol
SymbolSymbol
Test ConditionsTest Conditions
Test Conditions
Test ConditionsTest Conditions
Maximum RatingsMaximum Ratings
Maximum Ratings
Maximum RatingsMaximum Ratings
TJ= 25°C to 150°C 600 V
TJ= 25°C to 150°C; RGE = 1 MΩ 600 A
Continuous ±20 V
Transient ±30 V
TC= 25°C 160 A
TC= 90°C80A
TC= 25°C, 1 ms 30 0 A
= 15 V, TVJ = 125°C, RG = 5 Ω ICM = 160 A
GE
CES
VGE= 15 V, VCE = 360 V, TJ = 125°C 10µs
TC= 25°C 420 W
50/60 Hz t = 1 min 2500 V~
I
≤ 1 mA t = 1 s 3000 V~
ISOL
-55 ... +150 °C
150 °C
-55 ... +150 °C
Mounting torque 0.4/6 Nm/lb.in.
Test ConditionsTest Conditions
Test Conditions
Test ConditionsTest Conditions
Characteristic ValuesCharacteristic Values
Characteristic Values
Characteristic ValuesCharacteristic Values
(TJ = 25°C, unless otherwise specified)
min.min.
typ.typ.
typ.
typ.typ.
max.max.
max.
max.max.
BVBV
BV
BVBV
VV
V
VV
GE(th)GE(th)
GE(th)
GE(th)GE(th)
II
I
II
CESCES
CES
CESCES
II
I
II
GESGES
GES
GESGES
VV
V
VV
CE(sat)CE(sat)
CE(sat)
CE(sat)CE(sat)
CESCES
CES
CESCES
min.
min.min.
IC= 500 µA, VGE = 0 V 600 V
IC= 8 mA, VCE = V
VCE= V
VGE= 0 V TJ = 125°C2mA
CES
GE
TJ = 25°C 200 µA
48V
VCE= 0 V, VGE = ±20 V ±200 nA
IC= I
, VGE = 15 V 2.5 V
C90
E
miniBLOC, SOT-227 BminiBLOC, SOT-227 B
miniBLOC, SOT-227 B
miniBLOC, SOT-227 BminiBLOC, SOT-227 B
E = Emitter Q, C = Collector
G = Gate, E = Emitter Q
Q Either Emitter terminal can be used as
Main or Kelvin Emitter
FeaturesFeatures
Features
FeaturesFeatures
l
l
l
l
l
l
l
l
ApplicationsApplications
Applications
ApplicationsApplications
l
l
l
l
l
AdvantagesAdvantages
Advantages
AdvantagesAdvantages
l
l
l
CES
C25
CE(sat)
E153432 E153432
E153432
E153432 E153432
= 600 V
= 160 A
= 2.5 V
E
G
E
C
International standard package
miniBLOC (ISOTOP) compatible
Aluminium-nitride isolation
- high power dissipation
Isolation voltage 3000 V~
UL registered E 153432
Low V
CE(sat)
- for minimum on-state conduction
losses
Fast Recovery Epitaxial Diode
- short t
and I
rr
RM
Low collector-to-case capacitance
(< 60 pF)
- reduced RFI
Low package inductance (< 10 nH)
- easy to drive and to protect
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Space savings
Easy to mount with 2 screws
High power density
IXYS reserves the right to change limits, test conditions and dimensions.
© 2002 IXYS All rights reserved
98890 (1/2)
IXSN 80N60BD1IXSN 80N60BD1
IXSN 80N60BD1
IXSN 80N60BD1IXSN 80N60BD1
SymbolSymbol
Symbol
SymbolSymbol
gg
g
gg
fsfs
fs
fsfs
CC
C
CC
iesies
ies
iesies
CC
C
CC
oesoes
oes
oesoes
CC
C
CC
resres
res
resres
QQ
Q
QQ
gg
g
gg
QQ
Q
QQ
gege
ge
gege
QQ
Q
QQ
gcgc
gc
gcgc
tt
t
tt
d(on)d(on)
d(on)
d(on)d(on)
tt
t
tt
riri
ri
riri
tt
t
tt
d(off)d(off)
d(off)
d(off)d(off)
tt
t
tt
fifi
fi
fifi
EE
E
EE
offoff
off
offoff
tt
t
tt
d(on)d(on)
d(on)
d(on)d(on)
tt
t
tt
riri
ri
riri
EE
E
EE
onon
on
onon
tt
t
tt
d(off)d(off)
d(off)
d(off)d(off)
tt
t
tt
fifi
fi
fifi
EE
E
EE
offoff
off
offoff
RR
R
RR
thJCthJC
thJC
thJCthJC
RR
R
RR
thCKthCK
thCK
thCKthCK
Test ConditionsTest Conditions
Test Conditions
Test ConditionsTest Conditions
Characteristic ValuesCharacteristic Values
Characteristic Values
Characteristic ValuesCharacteristic Values
(TJ = 25°C, unless otherwise specified)
min.min.
typ.typ.
typ.
typ.typ.
max.max.
max.
max.max.
min.
min.min.
IC= 60 A; VCE = 10 V, 46 S
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
8500 pF
VCE = 25 V, VGE = 0 V, f = 1 MHz 650 pF
120 pF
335 nC
IC = I
, VGE = 15 V, VCE = 0.5 V
C90
CES
88 nC
158 nC
Inductive load, TInductive load, T
Inductive load, T
Inductive load, TInductive load, T
IC = I
, VGE = 15 V, L = 100 µH,
C90
VCE = 0.8 V
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • V
increased R
Inductive load, TInductive load, T
Inductive load, T
Inductive load, TInductive load, T
IC = I
, VGE = 15 V, L = 100 µH
C90
VCE = 0.8 V
Remarks: Switching times may increase
for V
(Clamp) > 0.8 • V
CE
increased R
= 25 = 25
= 25
= 25 = 25
JJ
J
JJ
, RG = 2.7 Ω
CES
G
= 125 = 125
= 125
= 125 = 125
JJ
J
JJ
, RG = 2.7 Ω
CES
G
°°
CC
°
C
°°
CC
, higher TJ or
CES
°°
CC
°
C
°°
CC
, higher TJ or
CES
140 ns
220 ns
300 600 ns
450 600 ns
10 mJ
140 ns
220 ns
8mJ
520 ns
550 ns
13 mJ
0.30 K/W
0.05 K/W
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 38.00 38.23 1.496 1.505
J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
Reverse Diode (FRED) Characteristic Values
(T
= 2 5°C, unless otherwise specified)
J
Symbol Test Conditions typ. max.
I
R
V
F
TVJ = 25°C VR= V
T
= 150°C 2.5 mA
VJ
RRM
650 uA
IF= 60 A 1.75 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 2.40 V
I
RM
t
rr
R
thJC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
IF= I
VR= 540 V, T
I
F
, VGE = 0 V, -di
C90
= 100°C
J
= 1 A, -di/dt = 50 A/µs, V
/dt = 100 A/µs8.0A
F
= 30 V 35 ns
R
0.85 K/W
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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