IXYS IXSN62N60U1 Datasheet
IGBT with Diode IXSN 62N60U1 V
I
V
Short Circuit SOA Capability
2
3
CES
C25
CE(sat)
= 600 V
= 90 A
= 2.5 V
4
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA V
(RBSOA) Clamped inductive load, L = 30 mH @ 0.8 V
t
SC
(SCSOA) RG = 22 W, non repetitive
P
C
V
ISOL
T
J
T
JM
T
stg
M
d
TJ= 25°C to 150°C 600 V
TJ= 25°C to 150°C; RGE = 1 MW 600 A
Continuous ±20 V
Transient ±30 V
TC= 25°C90A
TC= 90°C50A
TC= 25°C, 1 ms 180 A
= 15 V, TVJ = 125°C, RG = 22 W ICM = 100 A
GE
CES
VGE= 15 V, VCE = 360 V, TJ = 125°C 10ms
TC= 25°C 250 W
50/60 Hz t = 1 min 2500 V~
I
£ 1 mA t = 1 s 3000 V~
ISOL
-55 ... +150 °C
150 °C
-55 ... +150 °C
Mounting torque 1.5/13 Nm/lb.in.
Terminal connection torque (M4) 1.5/13 Nm/lb.in.
Weight 30 g
1
miniBLOC, SOT-227 B
2
1 = Emitter , 3 = Collector
2 = Gate, 4 = Emitter
Either Emitter terminal can be used as
Main or Kelvin Emitter
Features
• International standard package
miniBLOC (ISOTOP) compatible
• Aluminium-nitride isolation
- high power dissipation
• Isolation voltage 3000 V~
• Low V
CE(sat)
- for minimum on-state conduction
losses
• Fast Recovery Epitaxial Diode
- short trr and I
• Low collector-to-case capacitance
RM
(< 50 pF)
- reducesd RFI
• Low package inductance (< 10 nH)
- easy to drive and to protect
1
4
3
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
IXYS reserves the right to change limits, test conditions, and dimensions.
IC= 3 mA, VGE = 0 V 600 V
IC= 4 mA, VCE = V
VCE= 0.8 • V
VGE= 0 V TJ = 125°C15mA
CES
GE
TJ = 25°C 750 mA
48V
VCE= 0 V, VGE = ±20 V ±100 nA
IC= I
, VGE = 15 V 2.5 V
C90
© 2000 IXYS All rights reserved
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
Advantages
• Space savings
• Easy to mount with 2 screws
• High power density
92815I (7/00)
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IXSN62N60U1
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
fs
ies
oes
res
g
ge
gc
d(on)
ri
d(off)
fi
off
d(on)
ri
on
d(off)
fi
off
thJC
thCK
IC= I
Pulse test, t £ 300 ms, duty cycle d £ 2 %
VCE = 25 V, VGE = 0 V, f = 1 MHz 400 pF
IC = I
Inductive load, TJ = 25°C
I
= I
C
VCE = 0.8 V
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • V
increased R
Inductive load, TJ = 125°C
IC = I
V
CE
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • V
increased R
; VCE = 10 V, 20 23 S
C90
4500 pF
90 pF
190 250 nC
, VGE = 15 V, VCE = 0.5 V
C90
CES
45 60 nC
88 120 nC
70 ns
, VGE = 15 V, L = 100 mH,
C90
, RG = 2.7 W
CES
G
CES
, higher TJ or
220 ns
300 650 ns
400 700 ns
70 ns
, VGE = 15 V, L = 100 mH
C90
= 0.8 V
, RG = 2.7 W
CES
G
, higher TJ or
CES
220 ns
650 ns
600 1000 ns
0.05 K/W
711mJ
4mJ
9mJ
0.50 K/W
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 38.00 38.23 1.496 1.505
J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
V
F
I
RM
t
rr
R
thJC
© 2000 IXYS All rights reserved
IF = I
, VGE = 0 V, 1.8 V
C90
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IF = I
, VGE = 0 V, -diF/dt = 480 A/ms19A
C90
VR = 360 V TJ = 125°C 175 ns
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V TJ =25°C3550ns
0.80 K/W
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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