IXYS IXSN55N120A Datasheet
High Voltage IGBT
Short Circuit SOA Capability
Preliminary Data
IXSN 55N120A
3
2
4
V
CES
I
C25
V
CE(sat)
= 1200 V
= 110 A
=4 V
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA V
(RBSOA) Clamped inductive load, L = 30 mH @ 0.8 V
t
SC
(SCSOA) RG = 22 W, non-repetitive
P
C
V
ISOL
T
J
T
JM
T
stg
M
d
TJ= 25°C to 150°C 1200 V
TJ= 25°C to 150°C; RGE = 1 MW 1200 A
Continuous ±20 V
Transient ±30 V
TC= 25°C 110 A
TC= 90°C55A
TC= 25°C, 1 ms 160 A
= 15 V, TVJ = 125°C, RG = 22 W ICM = 110 A
GE
CES
VGE= 15 V, VCE = 0.6 V
, TJ = 125°C 10ms
CES
TC= 25°C IGBT 500 W
50/60 Hz t = 1 min 2500 V~
I
£ 1 mA t = 1 s 3000 V~
ISOL
-55 ... +150 °C
150 °C
-55 ... +150 °C
Mounting torque 1.5/13 Nm/lb.in.
Terminal connection torque (M4) 1.5/13 Nm/lb.in.
Weight 30 g
miniBLOC, SOT-227 B
1
2
4
3
1 = Emitter 3 = Collector
2 = Gate 4 = Emitter
Either Emitter terminal can be used as Main or
Kelvin Emitter
Features
International standard package
miniBLOC
Aluminium-nitride isolation
- high power dissipation
Isolation voltage 3000 V~
UL registered E 153432
Low V
CE(sat)
- for minimum on-state conduction
losses
Low collector-to-case capacitance
(<100 pF)
- reduces RFI
Low package inductance (< 10 nH)
- easy to drive and to protect
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
IXYS reserves the right to change limits, test conditions, and dimensions.
IC= 6 mA, VGE = 0 V 1200 V
IC= 8 mA, VCE = V
VCE= 0.8 V
VGE= 0 V TJ = 125°C 2.5 mA
CES
GE
TJ = 25°C1mA
48V
VCE= 0 V, VGE = ±20 V ±200 nA
IC= I
, VGE = 15 V 4 V
C90
© 2000 IXYS All rights reserved
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
Space savings
Easy to mount with 2 screws
High power density
95594B(6/97)
1 - 2
IXSN55N120A
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
g
fs
IC= I
; VCE = 10 V 32 45 S
C90
Pulse test, t £ 300 ms, duty cycle d £ 2 %
I
C(on)
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
t
t
t
E
E
R
R
ies
oes
res
g
ge
gc
d(on)
ri
d(off)
fi
off
d(on)
ri
d(off)
si
c
(on)
off
thJC
thCK
VCE = 10 V, VGE = 15 V 340 A
8000 pF
VCE = 25 V, VGE = 0 V, f = 1 MHz 590 pF
120 pF
300 nC
IC = I
, VGE = 15 V, VCE = 0.5 V
C90
CES
80 nC
140 nC
Inductive load, TJ = 25°C
IC = I
, VGE = 15 V, VCE = 0.8 V
C90
, RG = 2.7 W
CES
Remarks: Switching times may increase for V
(Clamp) > 0.8 V
, higher TJ or increased R
CES
CE
G
140 ns
220 ns
400 ns
700 1000 ns
18 mJ
140 ns
Inductive load, TJ = 125°C
I
= I
, VGE = 15 V, VCE = 0.8 V
C
C90
, RG = 2.7 W
CES
Remarks: Switching times may increase for V
(Clamp) > 0.8 V
, higher TJ or increased R
CES
CE
G
250 ns
600 ns
900 ns
950 ns
6mJ
25 mJ
0.25 K/W
0.05 K/W
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 38.00 38.23 1.496 1.505
J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2 - 2
Loading...