IXYS IXSN50N60BD2, IXSN50N60BD3 Datasheet
1 - 5
© 2000 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BV
CES
IC= 3 mA, VGE = 0 V 600 V
V
GE(th)
IC= 4 mA, VCE = V
GE
48V
I
CES
VCE= 0.8 • V
CES
TJ = 25°C 350 mA
VGE= 0 V TJ = 125°C5mA
I
GES
VCE= 0 V, VGE = ±20 V ±100 nA
V
CE(sat)
IC= I
C90
, VGE = 15 V 2.2 2.5 V
Features
• International standard package
miniBLOC
• Aluminium nitride isolation
- high power dissipation
• Isolation voltage 3000 V~
• Very high current, fast switching
IGBT & FRED diode
• MOS Gate turn-on
- drive simplicity
• Low collector-to-case capacitance
• Low package inductance (< 10 nH)
- easy to drive and to protect
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Buck converters
Advantages
• Easy to mount with 2 screws
• Space savings
• High power density
98675 (4/18/2000)
Symbol Test Conditions Maximum Ratings
V
CES
TJ = 25°C to 150°C 600 V
V
CGR
TJ = 25°C to 150°C; RGE = 1 MW 600 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C25
TC = 25°C75A
I
C90
TC = 90°C50A
I
CM
TC = 25°C, 1 ms 200 A
SSOA V
GE
= 15 V, TVJ = 125°C, RG = 22 W ICM = 100 A
(RBSOA) Clamped inductive load, L = 30 mH @ 0.8 V
CES
t
SC
VGE = 15 V, VCE = 360 V, TJ = 125°C 10ms
(SCSOA) RG = 22 W, non repetitive
P
C
TC = 25°C 250 W
V
RRM
600 V
I
FAVM
TC = 70°C; rectangular, d = 50% 60 A
I
FRM
tP z<10 ms; pulse width limited by TJ 600 A
P
D
TC = 25°C 150 W
T
J
-40 ... +150 °C
T
JM
150 °C
T
stg
-40 ... +150 °C
M
d
Mounting torque 1.5/13 Nm/lb.in.
Terminal connection torque (M4) 1.5/13 Nm/lb.in.
Weight 30 g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
IGBT
DiodeCase
HIGH Speed IGBT
with HiPerFRED
Short Circuit SOA Capability
Buck & boost configurations
SOT-227B, miniBLOC
E 153432
2
1
4
3
Preliminary data
...BD2 ...BD3
IXSN50N60BD2
1 = Emitter; 2 = Gate
3 = Collector; 4 = Diode cathode
IXSN50N60BD3
1 = Emitter/Diode Cathode; 2 = Gate
3 = Collector; 4 = Diode anode
V
CES
= 600 V
I
C25
= 75 A
V
CEsat)
= 2.5 V
t
fi
= 150 ns
IXSN 50N60BD2
IXSN 50N60BD3
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 5
© 2000 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
fs
IC= I
C90
; VCE = 10 V, 16 27 S
Pulse test, t £ 300 ms, duty cycle £ 2 %
C
ies
3850 pF
C
oes
VCE = 25 V, VGE = 0 V, f = 1 MHz 44 0 pF
C
res
50 pF
Q
g
167 nC
Q
ge
IC = I
C90
, VGE = 15 V, VCE = 0.5 V
CES
45 nC
Q
gc
88 nC
t
d(on)
70 ns
t
ri
70 ns
t
d(off)
150 300 ns
t
fi
150 300 ns
E
off
3.3 6.0 mJ
t
d(on)
70 ns
t
ri
70 ns
E
on
2.5 mJ
t
d(off)
230 ns
t
fi
230 ns
E
off
4.8 mJ
R
thJC
0.50 K/W
R
thCK
0.05 K/W
Inductive load, TJ = 25°C
IC = I
C90
, VGE = 15 V, L = 100 mH,
VCE = 0.8 V
CES
, RG = R
off
= 2.7 W
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • V
CES
, higher TJ or
increased R
G
Inductive load, TJ = 125°C
IC = I
C90
, VGE = 15 V, L = 100 mH
V
CE
= 0.8 V
CES
, RG = R
off
= 2.7 W
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • V
CES
, higher TJ or
increased R
G
Reverse Diode (FRED) Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Symbol Test Conditions typ. max.
I
R
TVJ = 25°C VR= V
RRM
650 uA
TVJ = 150°C 2.5 mA
V
F
IF= 60 A 1.75 V
Pulse test, t £ 300 ms, duty cycle d £ 2 % 2.40 V
I
RM
IF= I
C90
, VGE = 0 V, -diF/dt = 100 A/ms 8.0 A
VR= 540 V, TJ = 100°C
t
rr
IF= 1 A, -di/dt = 50 A/ms, VR = 30 V 35 ns
R
thJC
0.85 K/W
IXSN 50N60BD2
IXSN 50N60BD3
M4 screws (4x) supplied
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 38.00 38.23 1.496 1.505
J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
miniBLOC, SOT-227 B
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Loading...