IXYS IXSN100U1 Datasheet

IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: [phone], Fax: [phone]

IXYS Semiconductor GmbH

Edisonstr. 15, D-68623 Lampertheim

Phone: [phone], Fax: [phone]

© IXYS Corporation. All rights reserved.

Symbol Test Conditions Maximum Ratings

V

CES

TJ= 25°C to 150°C 1000 V

V

CGR

TJ= 25°C to 150°C; RGE = 1 MΩ 1000 A

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

TC= 25°C38A

I

C90

TC= 90°C25A

I

CM

TC= 25°C, 1 ms 50 A

SSOA V

GE

= 15 V, TVJ = 125°C, RG = 22 Ω ICM = 50 A

(RBSOA) Clamped inductive load, L = 30 µ H @ 0.8 V

CES

t

SC

VGE= 15 V, VCE = 0.6 • V

CES

, TJ = 125°C 10µs

(SCSOA) R

G

= 22 Ω , non repetitive

P

C

TC= 25°C 205 W

V

ISOL

50/60 Hz t = 1 min 2500 V~
I

ISOL

≤ 1 mA t = 1 s 3000 V~

T

J

-40 ... +150 °C

T

JM

150 °C

T

stg

-40 ... +150 °C

M

d

Mounting torque 1.5/13 Nm/lb.in.
Terminal connection torque (M4) 1.5/13 Nm/lb.in.

Weight 30 g

IGBT with Diode IXSN 35N100U1 V

CES

= 1000 V

I

C25

= 38 A

V

CE(sat)

= 3.5 V

High Short Circuit SOA Capability

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

min. typ. max.

BV

CES

IC= 6 mA, VGE = 0 V 1000 V

V

GE(th)

IC= 10 mA, VCE = V

GE

58V

I

CES

VCE= 0.8 • V

CES

TJ = 25°C 750 µA

V

GE

= 0 V TJ = 125°C15mA

I

GES

VCE= 0 V, VGE = ±20 V ±500 nA

V

CE(sat)

IC= I

C90

, VGE = 15 V 3.5 V

miniBLOC, SOT-227 B

2

1

4

3

1 = Emitter, 3 = Collector
2 = Gate, 4 = Kelvin Emitter

Features

●

International standard package
miniBLOC (ISOTOP) compatible

●

Isolation voltage 3000 V~

●

2nd generation HDMOSTM process

- for high short circuit SOA

●

Low V

CE(sat)

- for minimum on-state conduction
losses

●

MOS Gate turn-on

- drive simplicity

●

Fast Recovery Epitaxial Diode

(FRED)

- short t

rr

and I

RM

●

Low collector-to-case capacitance
(< 50 pF)

- reducesd RFI

●

Low package inductance (< 10 nH)

- easy to drive and to protect

Applications

●

AC motor speed control

●

DC servo and robot drives

●

DC choppers

●

Uninterruptible power supplies (UPS)

●

Switch-mode and resonant-mode
power supplies

Advantages

●

Space savings

●

Easy to mount with 2 screws

●

High power density

2

4

3

1

IXYS reserves the right to change limits, test conditions and dimensions.

93005C (7/94)

IXYS Semiconductor GmbH

Edisonstr. 15, D-68623 Lampertheim

Phone: [phone], Fax: [phone]

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: [phone], Fax: [phone]

IXSN 35N100U1

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

min. typ. max.

g

fs

IC= I

C90

; VCE = 20 V, 10 20 S

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

I

C(on)

VGE = 15 V 300 A

C

ies

4.5 nF

C

oes

VCE = 25 V, VGE = 0 V, f = 1 MHz 0 . 5 nF

C

res

0.09 nF

Q

g

180 nC

Q

ge

IC = I

C90

, VGE = 15 V, VCE = 0.5 V

CES

45 nC

Q

gc

120 nC

t

d(on)

80 ns

t

ri

150 ns

t

d(off)

800 ns

t

fi

2000 ns

E

on

3.2 mJ

E

off

6.8 mJ

R

thJC

0.61 K/W

R

thCK

0.05 K/W

Reverse Diode (FRED) Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

V

F

IF = I

C90

, VGE = 0 V, 2.3 V

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

I

RM

IF = I

C90

, VGE = 0 V, -diF/dt = 480 A/µs33A

t

rr

TJ = 125°C, VR = 360 V 150 ns

R

thJC

0.7 K/W

Inductive load, TJ = 125

°°

°°

°C

I

C

= I

C90

, VGE = 15 V,

V

CE

= 0.6 • V

CES

, Ron = 6.8 Ω , R

off

= 22 Ω

Remarks: Switching times may increase
for V

CE

(Clamp) > 0.6 • V

CES

, higher TJ or

increased R

G

miniBLOC, SOT-227 B

Dim. Millimeter Inches

Min. Max. Min. Max.

A 31.5 31.7 1.241 1.249
B 7.8 8.2 0.307 0.323

C 4.0 - 0.158 ­D 4.1 4.3 0.162 0.169

E 4.1 4.3 0.162 0.169
F 14.9 15.1 0.587 0.595

G 30.1 30.3 1.186 1.193
H 38.0 38.2 1.497 1.505

J 11.8 12.2 0.465 0.481
K 8.9 9.1 0.351 0.359

L 0.75 0.85 0.030 0.033

M 12.6 12.8 0.496 0.504

N 25.2 25.4 0.993 1.001
O 1.95 2.05 0.077 0.081

P - 5.0 - 0.197

M4 screws (4x) supplied

IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents: 4,835,592 4,881,108 5,017,508 5,049,961 5,187,117 5,486,715

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025