IXYS IXSX40N60BD1, IXSK40N60BD1 Datasheet
1 - 2
© 2000 IXYS All rights reserved
G = Gate, C = Collector,
E = Emitter
Symbol Test Conditions Maximum Ratings
V
CES
TJ= 25°C to 150°C 600 V
V
CGR
TJ= 25°C to 150°C; RGE = 1 MW 600 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C25
TC= 25°C, limited by leads 75 A
I
C90
TC= 90°C40A
I
CM
TC= 25°C, 1 ms 150 A
SSOA V
GE
= 15 V, TVJ = 125°C, RG = 22 W ICM = 80 A
(RBSOA) Clamped inductive load, L = 30 mH @ 0.8 V
CES
t
SC
VGE= 15 V, VCE = 360 V, TJ = 125°C 10ms
(SCSOA) RG = 22 W, non repetitive
P
C
TC= 25°C 280 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
M
d
Mounting torque (TO-264) 0.9/6 Nm/lb.in.
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Weight TO-264 10 g
PLUS247 5 g
V
CES
= 600 V
I
C25
= 75 A
V
CE(sat)
= 2.2 V
t
fi(typ)
= 120 ns
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BV
CES
IC= 1 mA, VGE = 0 V 600 V
V
GE(th)
IC= 4 mA, VCE = V
GE
47V
I
CES
VCE= 0.8 • V
CES
TJ = 25°C 650 mA
VGE= 0 V TJ = 150°C5mA
I
GES
VCE= 0 V, VGE = ±20 V ±100 nA
V
CE(sat)
IC= I
C90
, VGE = 15 V 2.2 V
98573A (7/00)
PLUS 247
TM
(IXSX)
IGBT with Diode
PLUS247TM package
Short Circuit SOA Capability
IXSK 40N60BD1
IXSX 40N60BD1
Features
• International standard packages
• Guaranteed Short Circuit SOA
capability
• Medium frequency IGBT and antiparallel FRED in one package
• Latest generation HDMOSTM process
• Low V
CE(sat)
- for minimum on-state conduction
losses
• MOS Gate turn-on
- drive simplicity
• Fast Recovery,low leakage Epitaxial
Diode
- soft recovery with low I
RM
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
Advantages
• PLUS 247
TM
package for clip or spring
mounting
• Space savings (two devices in one
package)
• Reduces assembly time and cost
TO-264 AA
G
C
E
(IXSK)
G
C
E
C (TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
Preliminary data
2 - 2
© 2000 IXYS All rights reserved
IXSK 40N60BD1
IXSX 40N60BD1
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
fs
IC= I
C90
; VCE = 10 V, 16 23 S
Pulse test, t £ 300 ms, duty cycle £ 2 %
C
iss
3700 pF
C
oss
VGS = 0 V, VDS = 25 V, f = 1 MHz 440 pF
C
rss
60 pF
Q
g
190 nC
Q
ge
IC = I
C90
, VGE = 15 V, VCE = 0.5 V
CES
45 nC
Q
gc
88 nC
t
d(on)
50 ns
t
ri
50 ns
t
d(off)
110 200 ns
t
fi
120 200 ns
E
off
1.8 2.6 mJ
t
d(on)
50 ns
t
ri
50 ns
E
on
2.2 mJ
t
d(off)
190 ns
t
fi
180 ns
E
off
2.6 mJ
R
thJC
0.48 K/W
R
thCK
0.15 K/W
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
V
F
IF = I
C90
, VGE = 0 V, 1.8 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
I
RM
IF = I
C90
, VGE = 0 V, -diF/dt = 100 A/ms 2 2.5 A
t
rr
VR = 100 V
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V 35 ns
R
thJC
0.75 K/W
Inductive load, TJ = 25°C
I
C
= I
C90
, VGE = 15 V, L = 100 mH,
VCE = 0.8 V
CES
, RG = 2.7 W
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • V
CES
, higher TJ or
increased R
G
Inductive load, TJ = 125°C
IC = I
C90
, VGE = 15 V, L = 100 mH
V
CE
= 0.8 V
CES
, RG = 2.7 W
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • V
CES
, higher TJ or
increased R
G
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.
TO-264 AA Outline
PLUS247TM (IXSX)
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A
1
2.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b
1
1.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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