IXYS IXSK35N120AU1 Datasheet
High Voltage
IGBT with Diode
Combi Pack
Short Circuit SOA Capability
IXSK35N120AU1
V
CES
I
C25
V
CE(sat)
= 1200 V
= 70 A
=4 V
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA V
(RBSOA) Clamped inductive load, L = 30 mH @ 0.8 V
t
SC
(SCSOA) RG = 22 W, non repetitive
P
C
T
J
T
JM
T
stg
T
L
M
d
TJ= 25°C to 150°C 1200 V
TJ= 25°C to 150°C; RGE = 1 MW 1200 V
Continuous ±20 V
Transient ±30 V
TC= 25°C70A
TC= 90°C35A
TC= 25°C, 1 ms 140 A
= 15 V, TJ = 125°C, RG = 22 W ICM = 70 A
GE
CES
VGE= 15 V, VCE = 720 V, TJ = 125°C 10ms
TC= 25°C IGBT 300 W
Diode 190 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
1.6 mm (0.063 in) from case for 10 s 300 °C
Mounting torque 1.15/13 Nm/lb.in.
Weight 10 g
TO-264 AA
C (TAB)
G
C
E
G = Gate, C = Collector,
E = Emitter, TAB = Collector
Features
• International standard package
JEDEC TO-264 AA
• High frequency IGBT and anti-parallel
FRED in one package
• 2nd generation HDMOSTM process
• Low V
CE(sat)
- for minimum on-state conduction
losses
• MOS Gate turn-on
- drive simplicity
• Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low I
RM
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
IXYS reserves the right to change limits, test conditions, and dimensions.
IC= 5 mA, VGE = 0 V 1200 V
IC= 4 mA, VCE = V
VCE= 0.8 • V
VGE= 0 V TJ = 125°C15mA
CES
GE
TJ = 25°C 750 mA
48V
VCE= 0 V, VGE = ±20 V ±100 nA
IC= I
, VGE = 15 V 4 V
C90
© 2000 IXYS All rights reserved
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
Advantages
• Space savings (two devices in one
package)
• Easy to mount with one screw
(isolated mounting screw hole)
• High power density
94526F(7/00)
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IXSK35N120AU1
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
fs
IC= I
; VCE = 10 V, 20 26 S
C90
Pulse test, t £ 300 ms, duty cycle £ 2 %
I
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
C(on)
ies
oes
res
g
ge
gc
d(on)
ri
d(off)
fi
off
d(on)
ri
on
d(off)
fi
off
VGE = 15 V, VCE = 10 V 170 A
3900 pF
VCE = 25 V, VGE = 0 V, f = 1 MHz 295 pF
60 pF
150 190 nC
IC = I
, VGE = 15 V, VCE = 0.5 V
C90
CES
40 60 nC
70 100 nC
Inductive load, TJ = 25°C
I
= I
, VGE = 15 V,
C
C90
L = 100 mH, VCE = 0.8 V
CES
, RG = 2.7 W
80 ns
150 ns
400 900 ns
500 700 ns
Note 1 10 mJ
Inductive load, T
IC = I
, VGE = 15 V,
C90
L = 100 mH
V
= 0.8 V
CE
, RG = 2.7 W
CES
= 125°C
J
80 ns
150 ns
8mJ
400 ns
700 ns
Note 1
15 mJ
TO-264 AA Outline
Dim.
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
R
thJC
R
thCK
0.15 K/W
0.42 K/W
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
V
F
I
RM
t
rr
R
thJC
IF = I
, VGE = 0 V, Pulse test, 2.35 V
C90
t £ 300 ms, duty cycle d £ 2 %, TJ = 125°C
IF = I
, VGE = 0 V, -diF/dt = 480 A/ms3236A
C90
VR = 540 V TJ = 100°C 225 ns
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V TJ =25°C4060ns
0.65 K/W
IXSK 35N120AU1 characteristic curves are located in the IXSH 35N120A data
sheet, Publication No. D96001DE, pages 66 - 67.
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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