IXYS IXST45B120B, IXSH45B120B Datasheet
1 - 2
© 2000 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
V
CES
TJ= 25°C to 150°C 1200 V
V
CGR
TJ= 25°C to 150°C; RGE = 1 MW 1200 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C25
TC= 25°C (limited by leads) 75 A
I
C90
TC= 90°C45A
I
CM
TC= 25°C, 1 ms 180 A
SSOA V
GE
= 15 V, TJ = 125°C, RG = 5 W ICM = 90 A
(RBSOA) Clamped inductive load @ 0.8 V
CES
t
SC
TJ = 125°C, VGE = 720 V; VGE = 15 V, RG = 5 W 10 ms
P
C
TC= 25°C 300 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
M
d
Mounting torque (TO-247) 1.13/10 Nm/lb.in.
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Weight TO-247 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BV
CES
IC= 1.0 mA, VGE = 0 V 1200 V
V
GE(th)
IC= 250 mA, VCE = V
GE
36V
I
CES
VCE= 0.8 • V
CES
50 mA
Note 1 TJ = 125°C 2.5 mA
I
GES
VCE= 0 V, VGE = ±20 V ±100 nA
V
CE(sat)
IC= I
C90, VGE
= 15 V 2.5 3.0 V
Note 2 TJ = 125°C 2.6 V
Features
• Epitaxial Silicon drift region
- fast switching
- small tail current
• MOS gate turn-on for drive simplicity
Applications
• AC motor speed control
• DC servo and robot drives
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
• Welding
98713A (7/00)
G = Gate C = Collector
S = Emitter TAB = Collector
TO-247 AD (IXSH)
(TAB)
TO-268 ( IXST)
(TAB)
G
E
IXSH 45N120B
IXST 45N120B
I
C25
= 75 A
V
CES
= 1200 V
V
CE(sat)
= 3.0 V
High Voltage IGBT
"S" Series - Improved SCSOA Capability
G
C
E
IXYS reserves the right to change limits, test conditions, and dimensions.
Preliminary data
2 - 2
© 2000 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
fs
IC= I
C90
; VCE = 10 V, 16 23 S
Note 2
C
ies
3300 pF
C
oes
VCE = 25 V, VGE = 0 V, f = 1 MHz 240 pF
C
res
65 pF
Q
g
120 nC
Q
ge
IC= I
C90
, VGE = 15 V, VCE = 0.5 V
CES
40 nC
Q
gc
45 nC
t
d(on)
36 ns
t
ri
27 ns
t
d(off)
360 500 ns
t
fi
380 750 ns
E
off
13 22 mJ
t
d(on)
38 ns
t
ri
29 ns
E
on
2.9 mJ
t
d(off)
440 ns
t
fi
700 ns
E
off
22 mJ
R
thJC
0.42 K/W
R
thCK
(TO-247) 0.25 K/W
Inductive load, TJ = 125°C
IC = I
C90
, VGE = 15 V
RG = 5 W, VCE = 0.8 V
CES
Note 3
Inductive load, TJ = 25°C
IC = I
C90
, VGE = 15 V
RG = 5 W
VCE = 0.8 V
CES
Note 3
Notes: 1. Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
2. Pulse test, t £ 300 ms, duty cycle £ 2 %
3. Switching times may increase for VCE (Clamp) > 0.8 • V
CES
, higher TJ or
increased RG.
IXSH 45N120B
IXST 45N120B
TO-247 AD (IXSH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-268AA (D3 PAK)
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
A
1
2.7 2.9 .106 .114
A2.02 .25 .001 .010
b 1.15 1.45 .045 .057
b
2
1.9 2.1 .75 .83
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E
1
13.3 13.6 .524 .535
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161
Min. Recommended Footprint
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Loading...