IXYS IXSH35N140A, IXSH35N135A Datasheet
© 2001 IXYS All rights reserved
SymbolSymbol
SymbolSymbol
Symbol
Test ConditionsTest Conditions
Test ConditionsTest Conditions
Test Conditions
Maximum RatingsMaximum Ratings
Maximum RatingsMaximum Ratings
Maximum Ratings
VV
VV
V
CESCES
CESCES
CES
TJ= 25°C to 150°C 35N140A 1400 V
35N135A 1350 V
VV
VV
V
CGRCGR
CGRCGR
CGR
TJ= 25°C to 150°C; RGE = 1 MΩ 35N140A 1400 V
35N135A 1350 V
VV
VV
V
GESGES
GESGES
GES
Continuous ±20 V
VV
VV
V
GEMGEM
GEMGEM
GEM
Transient ±30 V
II
II
I
C25C25
C25C25
C25
TC= 25°C70A
II
II
I
C90C90
C90C90
C90
TC= 90°C35A
II
II
I
CMCM
CMCM
CM
TC= 25°C, 1 ms 140 A
SSOASSOA
SSOASSOA
SSOA V
GE
= 15 V, TJ = 125°C, RG = 22 Ω ICM = 70 A
(RBSOA)(RBSOA)
(RBSOA)(RBSOA)
(RBSOA) Clamped inductive load, L = 30 µH @ 960 V
tt
tt
t
SCSC
SCSC
SC
VGE= 15 V, VCE = 840 V, TJ = 125°C 10µs
(SCSOA)(SCSOA)
(SCSOA)(SCSOA)
(SCSOA) RG = 22 Ω, non repetitive
PP
PP
P
CC
CC
C
TC= 25°C 300 W
TT
TT
T
JJ
JJ
J
-55 ... +150 °C
TT
TT
T
JMJM
JMJM
JM
150 °C
TT
TT
T
stgstg
stgstg
stg
-55 ... +150 °C
MM
MM
M
dd
dd
d
Mounting torque 1.13/10 Nm/lb.in.
WeightWeight
WeightWeight
Weight 6 g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Features
•International standard package
JEDEC TO-247
•High frequency IGBT with guaranteed
Short Circuit SOA capability
•Fast Fall Time for switching speeds
up to 20 kHz
•2nd generation HDMOS
TM
process
•Low V
CE(sat)
- for minimum on-state conduction
losses
•MOS Gate turn-on
- drive simplicity
Applications
• AC motor speed control
• DC servo and robot drive
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
• Welding
Advantages
• Easy to mount with 1 screw
(isolated mounting screw hole)
• High power density
TO-247 ADTO-247 AD
TO-247 ADTO-247 AD
TO-247 AD
G
C
E
G = Gate, C = Collector,
E = Emitter, TAB = Collector
92716H (5/01)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BV
CES
IC= 3 mA, VGE = 0 V 35N140A 1400 V
35N135A 1350
V
GE(th)
IC= 4 mA, VCE = V
GE
48V
I
CES
VCE= 0.8 V
CES
TJ = 25°C 400 mA
VGE= 0 V TJ = 125°C 2 mA
I
GES
VCE= 0 V, VGE = ±20 V ±100 nA
V
CE(sat)
IC= I
C90
, VGE = 15 V 3.4 4 V
High Voltage,
High speed IGBT
Short Circuit SOA Capability
V
CES
I
C25
V
CE(sat)
1400 V 70 A 4 V
1350 V 70 A 4 V
IXSH 35N140A
IXSH 35N135A
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXSH 35N135A
IXSH 35N140A
TO-247 AD Outline
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
g
fs
IC= I
C90
; VCE = 10 V, 26 S
Pulse test, t £ 300 ms, duty cycle d £ 2 %
I
C(on)
VGE = 15 V, VCE = 10 V 210 A
C
ies
4150 pF
C
oes
VCE = 25 V, VGE = 0 V, f = 1 MHz 235 pF
C
res
55 pF
Q
g
165 nC
Q
ge
IC = I
C90
, VGE = 15 V, VCE = 0.5 V
CES
45 nC
Q
gc
75 nC
t
d(on)
40 ns
t
ri
60 ns
t
d(off)
200 400 ns
t
fi
400 750 ns
E
off
12 mJ
t
d(on)
40 ns
t
ri
65 ns
E
on
4mJ
t
d(off)
200 ns
t
fi
800 ns
E
off
18 mJ
R
thJC
0.42 K/W
R
thCK
0.25 K/W
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
Inductive load, TInductive load, T
Inductive load, TInductive load, T
Inductive load, T
JJ
JJ
J
= 25 = 25
= 25 = 25
= 25
°°
°°
°
CC
CC
C
I
C
= I
C90
, VGE = 15 V, L = 100 µH
VCE = 960 V, RG = 2.7 Ω
Switching times may increase for
VCE (Clamp) > 960 V, higher T
J
or increased R
G
Inductive load, TInductive load, T
Inductive load, TInductive load, T
Inductive load, T
JJ
JJ
J
= 125 = 125
= 125 = 125
= 125
°°
°°
°
CC
CC
C
IC = I
C90
, VGE = 15 V, L = 100 µH
V
CE
= 960 V, RG = 2.7 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 960 V,
higher TJ or increased R
G
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