IXYS IXSH30N60U1, IXSH30N60AU1 Datasheet
V
CES
I
C25
V
CE(sat)
Low V
IGBT with Diode IXSH 30 N60U1 600 V 50 A 2.5 V
CE(sat)
High Speed IGBT with Diode IXSH 30 N60AU1 600 V 50 A 3.0 V
Combi Packs
Short Circuit SOA Capability
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA V
(RBSOA) Clamped inductive load, L = 100 mH @ 0.8 V
t
SC
(SCSOA) R
P
C
T
J
T
JM
T
stg
M
d
TJ= 25°C to 150°C 600 V
TJ= 25°C to 150°C; RGE = 1 MW 600 V
Continuous ±20 V
Transient ±30 V
TC= 25°C50A
TC= 90°C30A
TC= 25°C, 1 ms 100 A
= 15 V, TJ = 125°C, RG = 33 W ICM = 60 A
GE
CES
VGE= 15 V, VCE = 360 V, TJ = 125°C 10ms
= 33 W, non repetitive
G
TC= 25°C 200 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
Mounting torque 1.13/10 Nm/lb.in.
Weight 6g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
TO-247 AD
G
C
E
G = Gate, C = Collector,
E = Emitter, TAB = Collector
Features
• International standard package
JEDEC TO-247 AD
• High frequency IGBT with guaranteed
Short Circuit SOA capability
• IGBT and anti-parallel FRED in one
package
• 2nd generation HDMOSTM process
• Low V
CE(sat)
- for low on-state conduction losses
• MOS Gate turn-on
- drive simplicity
Applications
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
IXYS reserves the right to change limits, test conditions, and dimensions.
IC= 750 mA, VGE = 0 V 600 V
IC= 2.5 mA, VCE = V
VCE= 0.8 • V
VGE= 0 V TJ = 125°C8mA
CES
GE
TJ = 25°C 500 mA
58V
VCE= 0 V, VGE = ±20 V ±100 nA
IC= I
, VGE = 15 V 30N60U1 2.5 V
C90
30N60AU1 3.0 V
© 2000 IXYS All rights reserved
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
Advantages
• Space savings (two devices in one
package)
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Reduces assembly time and cost
• High power density
92714F (12/96)
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IXSH 30N60U1
IXSH 30N60AU1
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
I
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
fs
C(on)
ies
oes
res
g
ge
gc
d(on)
ri
d(off)
fi
off
d(on)
ri
on
d(off)
fi
off
IC= I
Pulse test, t £ 300 ms, duty cycle £ 2 %
VGE = 15 V, VCE = 10 V 100 A
VCE = 25 V, VGE = 0 V, f = 1 MHz 240 pF
IC = I
Inductive load, TJ = 25°C
= I
I
C
V
CE
Remarks: Switching times
may increase for
V
CE
higher TJ or increased R
Inductive load, TJ = 125°C
IC = I
L = 100 mH
VCE = 0.8 V
Remarks: Switching times
may increase for
V
CE
TJ or increased R
; VCE = 10 V, 7 1 3 S
C90
2760 pF
51 pF
110 150 nC
, VGE = 15 V, VCE = 0.5 V
C90
CES
34 45 nC
47 63 nC
60 ns
, VGE = 15 V, L = 100 mH,
C90
= 0.8 V
, RG = 4.7 W
CES
130 ns
400 ns
30N60U1 400 ns
(Clamp) > 0.8 • V
CES
,
G
30N60AU1 200 ns
30N60AU1 2.5 mJ
60 ns
130 ns
, VGE = 15 V,
C90
, RG = 4.7 W
CES
30N60U1 540 1000 ns
30N60AU1 340 525 ns
4.2 mJ
30N60U1 600 1500 ns
30N60AU1 340 700 ns
(Clamp) > 0.8 • V
, higher
CES
G
30N60U1 1 2 mJ
30N60AU1 6 mJ
TO-247 AD (IXSH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
R
thJC
R
thCK
0.25 K/W
0.63 K/W
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
V
F
I
RM
t
rr
R
thJC
© 2000 IXYS All rights reserved
IF = I
, VGE = 0 V, 1.6 V
C90
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IF = I
, VGE = 0 V, -diF/dt = 240 A/ms1015A
C90
VR = 360 V TJ = 125°C 150 ns
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V TJ =25°C3550ns
1K/W
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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