IXYS IXST30N60C, IXSH30N60C, IXSH30N60B Datasheet

High Speed IGBT

Short Circuit SOA Capability

V

CES

I

CES

t

fi

IXSH/IXST 30N60B 600 V 2.0 V 140 ns
IXSH/IXST 30N60C 600 V 2.5 V 70 ns

Symbol Test Conditions Maximum Ratings

V

CES

V

CGR

V

GES

V

GEM

I

C25

I

C90

I

CM

SSOA V
(RBSOA) Clamped inductive load, V

t

SC

(SCSOA) RG = 33 Ω, non repetitive
P

C

T

J

T

JM

T

stg

M

d

T

= 25°C to 150°C 600 V

J

T

= 25°C to 150°C; RGE = 1 MΩ 600 V

J

Continuous ±20 V
Transient ±30 V

T

= 25°C55A

C

T

= 90°C30A

C

T

= 25°C, 1 ms 110 A

C

= 15 V, T

GE

VGE= 15 V, VCE = 360 V, T

T

= 25°C 200 W

C

= 125°C, RG = 2.7 Ω I

J

= 0.8 V

CC

= 125°C 10µs

J

CES

@ 0.8 V

= 60 A

CM

CES

-55 ... +150 °C
150 °C

-55 ... +150 °C

Mounting torque (TO-247) 1.13/10 Nm/lb.in.

Weight TO-247 6 g

TO-268 4 g

Maximum lead temperature for soldering 300 °C

1.6 mm (0.062 in.) from case for 10 s

TO-247 AD (IXSH)

TO-268 (D3) ( IXST)

G

S

G = Gate
S = Source TAB = Drain

Features

l

International standard packages

l

Short Circuit SOA capability

l

High frequency IGBT

l

New generation HDMOS

TM

process

Applications

(TAB)

(TAB)

Symbol Test Conditions Characteristic Values

(T

= 25°C, unless otherwise specified)

BV
V

I

CES

I

GES

V

CES

GE(th)

CE(sat)

I

= 250 µA, V

C

IC= 2.5 mA, VCE = V

VCE= 0.8 V
VGE= 0 V T

VCE= 0 V, V

VGE= 15 V; IC = I

© 2001 IXYS All rights reserved

J

= 0 V 600 V

GE

GE

T

CES

= ±20 V ±100 nA

GE

C90

= 25°C 100 µA

J

= 125°C1mA

J

30N60B 2.0 V
30N60C 2.5 V

min. typ. max.

47V

l

AC motor speed control

l

DC servo and robot drives

l

DC choppers

l

Uninterruptible power supplies (UPS)

l

Switch-mode and resonant-mode
power supplies

Advantages

l

Easy to mount with 1 screw
(isolated mounting screw hole)

l

Surface mountable, high power case
style

l

Reduce assembly time and cost

l

High power density

98519B (11/01)

IXSH/IXST 30N60B
IXSH/IXST 30N60C

Symbol Test Conditions Characteristic Values

(T

= 25°C, unless otherwise specified)

g

C
C
C

Q
Q
Q

t
t
t

t

E

t
t
E
t

t

E

fs

ies

oes

res

g

ge

gc

d(on)

ri

d(off)

fi

off

d(on)

ri

on

d(off)

fi

off

J

IC = I

Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %

; VCE = 10 V, 10 S

C90

VCE = 25 V, VGE = 0 V, f = 1 MHz 240 pF

IC = I

Inductive load, TJ = 25

I

C

VCE= 0.8 V
Note 1

Inductive load, TJ = 125

I

C

VCE= 0.8 V
Note 1

, VGE = 15 V, VCE = 0.5 V

C90

°°

°C

°°

= I

, VGE = 15 V

C90

, R

= 4.7 Ω

CES

G

= I

, VGE = 15 V

C90

, R

= 4.7 Ω

CES

G

°°

°C

°°

CES

min. typ. max.

3100 pF

30 pF

100 nC

30 nC

38 nC

30 ns

30 ns

30N60B 150 270 ns

30N60C 90 150 ns

30N60B 140 270 ns

30N60C 70 120 ns

30N60B 1.5 2.5 mJ

30N60C 0.7 1.2 mJ

35 ns

35 ns

0.5 mJ

30N60B 270 ns

30N60C 150 ns

30N60B 250 ns

30N60C 140

30N60B 2.5 mJ

30N60C 1.2 mJ

TO-247 AD Outline

1 = Gate
2 = Collector
3 = Emitter
Tab = Collector

TO-268 Outline

R

thJC

R

thCK

(TO-247) 0.25 K/W

Notes: 1. Switching times may increase for VCE (Clamp) > 0.8 V

increased RG.

0.62 K/W

, higher TJ or

CES

Min Recommended Footprint

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025