IXYS IXSH30N60, IXSM 30N60 Service Manual

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Low V

CE(sat)

High Speed IGBT

IGBT

IXSH/IXSM 30N60
IXSH/IXSM 30N60A

Short Circuit SOA Capability

Symbol Test Conditions Maximum Ratings

V

CES

V

CGR

V

GES

V

GEM

I

C25

I

C90

I

CM

SSOA V
(RBSOA) Clamped inductive load, L = 100 µH @ 0.8 V

t

SC

(SCSOA) R

P

C

T

J

T

JM

T

stg

M

d

Weight TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering 300 °C

1.6 mm (0.062 in.) from case for 10 s

Symbol Test Conditions Characteristic Values

BV

CES

V

GE(th)

I

CES

I

GES

V

CE(sat)

T

= 25°C to 150°C 600 V

J

T

= 25°C to 150°C; RGE = 1 MΩ 600 V

J

Continuous ±20 V
Transient ±30 V

T

= 25°C50A

C

T

= 90°C30A

C

T

= 25°C, 1 ms 100 A

C

= 15 V, T

GE

VGE= 15 V, VCE = 360 V, T

= 33 Ω, non repetitive

G

T

= 25°C 200 W

C

= 125°C, RG = 4.7 Ω I

J

= 125°C 10µs

J

= 60 A

CM

CES

-55 ... +150 °C
150 °C

-55 ... +150 °C

Mounting torque 1.13/10 Nm/lb.in.

= 25°C, unless otherwise specified)

(T

I

= 250 µA, V

C

IC= 2.5 mA, VCE = V

VCE= 0.8  V
VGE= 0 V T

VCE= 0 V, V

IC= I

, VGE = 15 V 30N60 2.5 V

C90

= 0 V 600 V

GE

GE

CES

= ±20 V ±100 nA

GE

J

T

= 25°C 100 µA

J

= 125°C1mA

J

30N60A 3.0 V

min. typ. max.

58V

V

CES

I

C25

V

CE(sat)

600 V 50 A 2.5 V
600 V 50 A 3.0 V

TO-247 AD (IXSH)

G

C

E

TO-204 AE (IXSM)

C

G = Gate, C = Collector,
E = Emitter, TAB = Collector

Features

l

International standard packages

l

Guaranteed Short Circuit SOA
capability

l

Low V

CE(sat)

- for low on-state conduction losses

l

High current handling capability

l

MOS Gate turn-on

- drive simplicity

l

Fast Fall Time for switching speeds
up to 20 kHz

Applications

l

AC motor speed control

l

Uninterruptible power supplies (UPS)

l

Welding

Advantages

l

Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)

l

High power density

© 1998 IXYS All rights reserved

91549H (9/98)

IXSH 30N60 IXSM 30N60
IXSH 30N60A IXSM 30N60A

Symbol Test Conditions Characteristic Values

(T

= 25°C, unless otherwise specified)

g

I

C

C

C

Q

Q

Q

t

t

t

t

E

fs

C(on)

ies

oes

res

g

ge

gc

d(on)

ri

d(off)

fi

off

J

IC= I
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %

; VCE = 10 V, 7 13 S

C90

VGE = 15 V, VCE = 10 V 100 A

VCE = 25 V, VGE = 0 V, f = 1 MHz 240 pF

IC = I

, VGE = 15 V, VCE = 0.5 V

C90

CES

Inductive load, TJ = 25°C

I

= I

, V

C

VCE = 0.8 V
Remarks: Switching times

may increase for
VCE (Clamp) > 0.8  V
higher TJ or increased R

= 15 V, L = 100 µH

C90

GE

, R

CES

= 4.7 Ω

G

CES

30N60 400 ns
30N60A 200 ns

,

30N60 5.0 mJ
30N60A 2.5 mJ

G

min. typ. max.

2760 pF

51 pF

110 150 nC

34 45 nC
47 63 nC

60 ns
130 ns
400 ns

TO-247 AD Outline

1 = Gate
2 = Collector
3 = Emitter
Tab = Collector

t

t

E

t

t

E

R

R

d(on)

ri

on

d(off)

fi

off

thJC

thCK

Inductive load, TJ = 125°C

IC = I

, VGE = 15 V,

C90

L = 100 µH
VCE = 0.8 V

R

= 4.7 Ω

G

CES

,

Remarks: Switching times
may increase for
V

(Clamp) > 0.8  V

CE

higher TJ or increased R

CES

,

G

30N60 540 1000 ns
30N60A 340 525 ns

30N60 600 1500 ns
30N60A 340 700 ns

30N60 12 mJ
30N60A 6 mJ

60 ns
130 ns

1.0 mJ

0.63 K/W

0.25 K/W

IXSH 30N60 and IXSH 30N60A characteristic curves are located on the
IXSH 30N60U1 and IXSH 30N60AU1 data sheets.

TO-204AE Outline

1 = Gate
2 = Emitter
Case = Collector

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025