IXYS IXSH25N120AU1 Datasheet
IGBT with Diode
IXSH25N120AU1
"S" Series - Improved SCSOA Capability
I
C25
V
CES
= 50 A
= 1200 V
C
G
E
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA V
(RBSOA) Clamped inductive load, L = 100 µH @ 0.8 V
t
sc
P
C
T
J
T
JM
T
STG
M
d
TJ= 25°C to 150°C 1200 V
TJ= 25°C to 150°C; R
= 1 MW 1200 V
GE
Continuous ±20 V
Transient ±30 V
TC= 25°C 50 A
TC= 90°C 25 A
TC= 25°C, 1 ms 80 A
= 15 V, TJ = 125°C, RG = 33 W I
GE
= 50 A
CM
CES
TJ = 125ºC, VCE = 720 V; VGE = 15V, RG = 33W 10 µs
TC= 25°C 200 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
Mounting torque 1.15/10 Nm/lb-in.
Weight 6g
Max. Lead Temperature for 300 °C
Soldering (1.6mm from case for 10s)
V
CE(sat)
= 4.0 V
TO-247 AD
G
E
C
Features
• High frequency IGBT with guaranteed
short circuit SOA capability.
• IGBT with anti-parallel diode in one
package
nd
generation HDMOSTM process
•2
Low VCE(sat)
- for minimum on-state conduction
losses
• MOS Gate turn-on
- drive simplicity
Applications
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
IXYS reserves the right to change limits, test conditions, and dimensions.
IC= 4 mA, V
IC= 2.5 mA, VCE = V
VCE= 0.8 V
Note 2 T
= 0 V 1200 V
GE
GE
, VGE= 0 V TJ = 25°C 500 mA
CES
= 125°C 8 mA
J
48V
VCE= 0 V, VGE = ±20 V + 100 nA
IC = I
, VGE = 15 V 4.0 V
C90
© 2000 IXYS All rights reserved
• AC motor speed control
• DC servo and robot drives
• Uninterruptible power supplies
(UPS)
• Switched-mode and resonant-mode
power supplies
• DC choppers
Advantages
• Saves space (two devices in one
package)
• Easy to mount (isolated mounting
hole)
• Reduces assembly time and cost
• Operates cooler
• Easier to assemble
94521C(7/00)
1 - 2
IXSH25N120AU1
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
g
I
C
C
C
Q
Q
Q
t
t
t
t
t
E
t
t
E
t
t
t
E
R
R
fs
C(on)
ies
oes
res
g
ge
gc
d(on)
ri
d(off)
fi
c
off
d(on)
ri
(on)
d(off)
fi
c
off
thJC
thCK
IC= I
Pulse test, t < 300 µs, duty cycle < 2 %
VGE = 15V, V
, VCE = 10 V, 10 17 S
C90
= 10 V 140 A
CE
VCE= 25 V, VGE = 0 V, f = 1 MHz 2850 pF
210 pF
50 pF
IC= I
c90
, V
GE
= 15 V, V
= 0.5 V
CE
CES
120 nC
30 nC
50 nC
Inductive load, TJ = 25°C 100 ns
IC= I
RG = 18 W, VCLAMP = 0.8 V
, VGE = 15 V, L = 100µH 200 ns
C90
CES
450 ns
Note 1 650 ns
800 ns
9.6 mJ
Inductive load, TJ = 125°C 100 ns
IC= I
= 15 V, L = 100µH 200 ns
C90, VGE
RG = 18 W 1.8 mJ
V
CLAMP
= 0.8 V
CES
450 ns
Note 1 900 ns
1200 ns
17 mJ
0.63 K/W
0.25 K/W
TO-247 AD (IXSH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
Reverse Diode (FRED) Characteristic Values
(TJ = 25ºC unless otherwise specified)
Min. Typ. Max.
I
= I
V
F
F
, VGE = 0V 2.5 V
C90
Pulse test, t< 300 µs, duty cycle < 2% TJ = 125ºC 2.2 V
t
rr
I
RM
t
rr
R
thJC
I
= 1A; di/dt = -100/µs; VR = 30V; TJ = 25ºC 40 60 ns
F
I
= I
F
, VGE = 0V, -diF/dt = 240 A/µs 16 A
C90
TJ= 100ºC, VR = 540V 300 ns
1.0 K/W
Notes:
1) Switching times may increase for V
2) Device must be heatsunk for high temperature measurements to avoid thermal
(Clamp) > 0.8 V
CE
, higher TJ or Rg values.
CES
runaway.
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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