IXYS IXSH25N120A Datasheet

IGBT

IXSH25N120A

I

C25

= 50 A

Improved SCSOA Capability

Symbol Test Conditions Maximum Ratings

V

CES

V

CGR

V

GES

V

GEM

I

C25

I

C90

I

CM

SSOA V
(RBSOA)Clamped inductive load, L = 100 µH @ 0.8 V

t

sc

P

C

T

J

T

JM

T

STG

M

d

Weight 6g
Max. Lead Temperature for 300 °C

Soldering (1.6mm from case for 10s)

TJ= 25°C to 150°C 1200 V
TJ= 25°C to 150°C; R

= 1 MW 1200 V

GE

Continuous ±20 V
Transient ±30 V

TC= 25°C 50 A
TC= 90°C 25 A
TC= 25°C, 1 ms 80 A

= 15 V, TJ = 125°C, RG = 33 W I

GE

= 50 A

CM

CES

TJ = 125ºC, VCE = 720 V; VGE = 15V, RG = 33W 10 µs
TC= 25°C 200 W

-55 ... +150 °C
150 °C

-55 ... +150 °C

Mounting torque 1.15/10 Nm/lb-in.

V

CES

V

CE(sat)

TO-247AD

G

Features

• Second generation HDMOS
Low V

CE(sat)

- for minimum on-state conduction

losses

• MOS Gate turn-on

- drive simplicity

= 1200 V
= 4.0 V

C

E

TM

process

Symbol Test Conditions Characteristic Values

(TJ = 25°C unless otherwise specified)

Min. Typ. Max.

BV

CES

V

GE(th)

I

CES

I

GES

V

CE(sat)

IXYS reserves the right to change limits, test conditions, and dimensions.

IC= 3 mA, V
IC= 2.5 mA, VCE = V
VCE= 0.8 V

Note 2 T

= 0 V 1200 V

GE

GE

, VGE= 0 V TJ = 25°C 200 mA

CES

= 125°C 1 mA

J

48V

VCE= 0 V, VGE = ±20 V + 100 nA
IC = I

, VGE = 15 V 4.0 V

C90

© 2000 IXYS All rights reserved

Applications

• AC motor speed control

• DC servo and robot drives

• Uninterruptible power supplies (UPS)

• Switched-mode and resonant-mode

power supplies

• DC choppers

Advantages

• Easy to mount (isolated mounting

hole)

• Reduces assembly time and cost

95593A (7/00)

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IXSH 25N120A

Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.

g

I

C
C
C

Q
Q
Q

t
t
t
t
E

t
t
E

t
t
E

R
R

fs

C(on)

ies

oes

res

g

ge

gc

d(on)

ri

d(off)

fi

off

d(on)

ri

(on)

d(off)

fi

off

thJC
thCK

IC= I
Pulse test, t

VGE= 15V, V

, VCE = 10 V, 10 17 S

C90

< 300 µs, duty cycle < 2 %

= 10 V 140 A

CE

VCE= 25 V, VGE = 0 V, f = 1 MHz 2850 pF

210 pF

50 pF

IC= I

c90

, V

GE

= 15 V, V

= 0.5 V

CE

CES

120 nC

30 nC
50 nC

Inductive load, TJ = 25°C 100 ns
IC= I
RG = 18 W, VCLAMP = 0.8 V

, VGE = 15 V, L = 100µH 200 ns

C90

CES

450 ns

Note 1 65 0 ns

9.6 mJ

Inductive load, TJ = 125°C
I

C

R
V

= I

G

CLAMP

= 18 W

= 15 V, L = 100µH

C90, VGE

= 0.8 V

CES

Note 1

100 ns
200 ns

1.8 mJ
450 ns
900 ns

17 mJ

0.63 K/W

0.25 K/W

TO-247 AD (IXSH) Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845

C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144

E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244

G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177

J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433

L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031

N 1.5 2.49 0.087 0.102

Notes:

1) Switching times may increase for VCE (Clamp) > 0.8 V

, higher TJ or Rg values.

CES

2) Device must be heatsunk for high temperature measurements to avoid thermal runaway.

© 2000 IXYS All rights reserved

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

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