IXYS IXST24N60B, IXSH24N60B Datasheet
© 2001 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
V
CES
T
J
= 25°C to 150°C 600 V
V
CGR
T
J
= 25°C to 150°C; RGE = 1 MΩ 600 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C25
T
C
= 25°C48A
I
C90
T
C
= 90°C24A
I
CM
T
C
= 25°C, 1 ms 96 A
SSOA V
GE
= 15 V, T
J
= 125°C, RG = 33 Ω I
CM
= 48 A
(RBSOA) Clamped inductive load, V
CC
= 0.8 V
CES
@ 0.8 V
CES
t
SC
VGE= 15 V, VCE = 360 V, T
J
= 125°C 10µs
(SCSOA) RG = 33 Ω, non repetitive
P
C
T
C
= 25°C 150 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
M
d
Mounting torque 1.13/10 Nm/lb.in.
Weight 6g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
BV
CES
I
C
= 250 µA, V
GE
= 0 V 600 V
V
GE(th)
IC= 1.5 mA, VCE = V
GE
3.5 6.5 V
I
CES
VCE= 0.8 V
CES
T
J
= 25°C25µA
VGE= 0 V T
J
= 125°C1mA
I
GES
VCE= 0 V, V
GE
= ±20 V ±100 nA
V
CE(sat)
IC= I
C90
, VGE = 15 V 2.5 V
Features
l
International standard packages
l
Guaranteed Short Circuit SOA
capability
l
Low V
CE(sat)
- for low on-state conduction losses
l
High current handling capability
l
MOS Gate turn-on
- drive simplicity
l
Fast Fall Time for switching speeds
up to 50 kHz
Applications
l
AC and DC motor speed control
l
Uninterruptible power supplies (UPS)
l
Welding
Advantages
l
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
l
High power density
98768(5/01)
Advance Technical Information
G = Gate
E = Emitter TAB = Collector
TO-247 AD (IXSH)
(TAB)
TO-268 (D3) ( IXST)
(TAB)
G
E
High Speed IGBT
Short Circuit SOA Capability
V
CES
= 600 V
I
C25
= 48 A
V
CE(sat)
= 2.5 V
t
fi typ
= 170 ns
IXSH 24N60B
IXST 24N60B
C
E
G
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
g
fs
IC= I
C90
; VCE = 10 V, 9 13 S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
C
ies
1450 pF
C
oes
VCE = 25 V, VGE = 0 V, f = 1 MHz 130 pF
C
res
37 pF
Q
g
41 nC
Q
ge
IC = I
C90
, VGE = 15 V, VCE = 0.5 V
CES
18 nC
Q
gc
18 nC
t
d(on)
50 n s
t
ri
50 n s
t
d(off)
150 250 ns
t
fi
170 300 ns
E
off
1.3 2.6 mJ
t
d(on)
55 n s
t
ri
75 ns
E
on
1.2 mJ
t
d(off)
190 ns
t
fi
280 ns
E
off
2.4 mJ
R
thJC
0.83 K/W
R
thCK
0.25 K/W
Inductive load, TJ = 125
°°
°°
°C
IC = I
C90
, VGE = 15 V,
VCE = 0.8 V
CES
, R
G
= 33 Ω
TO-247 AD Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
Inductive load, TJ = 25
°°
°°
°C
IC = I
C90
, V
GE
= 15 V, L = 100 µH
VCE = 0.8 V
CES
, R
G
= 33 Ω
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
A
1
2.7 2.9 .106 .114
A2.02 .25 .001 .010
b 1.15 1.45 .045 .057
b
2
1.9 2.1 .75 .83
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E
1
13.3 13.6 .524 .535
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161
TO-268 Outline
IXSH 24N60B
IXST 24N60B
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