IXYS IXST15N120B, IXSH15N120B Datasheet
1 - 2
© 2000 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
V
CES
TJ= 25°C to 150°C 1200 V
V
CGR
TJ= 25°C to 150°C; RGE = 1 MW 1200 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C25
TC= 25°C30A
I
C90
TC= 90°C15A
I
CM
TC= 25°C, 1 ms 60 A
SSOA V
GE
= 15 V, TJ = 125°C, RG = 10 W ICM = 40 A
(RBSOA) Clamped inductive load @ 0.8 V
CES
t
SC
TJ = 125°C, VGE = 720 V; VGE = 15 V, RG = 10 W 10 ms
Non repetitive
P
C
TC= 25°C 150 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
M
d
Mounting torque (TO-247) 1.13/10 Nm/lb.in.
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering (TO-268) 260 °C
Weight TO-247 6 g
TO-268 4 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BV
CES
IC= 1.0 mA, VGE = 0 V 1200 V
V
GE(th)
IC= 250 mA, VCE = V
GE
36V
I
CES
VCE= 0.8 • V
CES
50 mA
Note 1 TJ = 125°C 2.5 mA
I
GES
VCE= 0 V, VGE = ±20 V ±100 nA
V
CE(sat)
IC = I
C90, VGE
= 15 V 3.0 3.4 V
Note 2 TJ = 125°C 2.8 V
Features
• High Blocking Voltage
• Epitaxial Silicon drift region
- fast switching
- small tail current
- low switching losses
• MOS gate turn-on for drive simplicity
Molding epoxies meet UL 94 V-0
flammability classification
Applications
• AC motor speed control
• DC servo and robot drives
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
• DC choppers
98652A (7/00)
TO-247 AD (IXSH)
(TAB)
TO-268 (IXST)
(TAB)
G
E
I
C25
= 30 A
V
CES
= 1200 V
V
CE(sat)
= 3.4 V
G
C
E
HIGH V oltage IGBT
"S" Series - Improved SCSOA Capability
IXYS reserves the right to change limits, test conditions, and dimensions.
Preliminary data
IXSH 15N120B
IXST 15N120B
2 - 2
© 2000 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
fs
IC= I
C90
; VCE = 10 V, 7 9.5 S
Note 2
C
ies
1400 pF
C
oes
VCE = 25 V, VGE = 0 V, f = 1 MHz 98 pF
C
res
37 pF
Q
g
57 nC
Q
ge
IC= I
C90
, VGE = 15 V, VCE = 0.5 V
CES
14 nC
Q
gc
25 nC
t
d(on)
30 ns
t
ri
25 ns
t
d(off)
148 300 ns
t
fi
126 250 ns
E
off
1.5 2.9 mJ
t
d(on)
30 ns
t
ri
25 ns
E
on
1.1 mJ
t
d(off)
265 ns
t
fi
298 ns
E
off
3.1 mJ
R
thJC
0.83 K/W
R
thCK
(TO-247) 0.25 K/W
Inductive load, TJ = 125°C
IC = I
C90
, VGE = 15 V
RG = 10 W, VCE = 0.8 V
CES
Note 3
Inductive load, TJ = 25°C
IC = I
C90
, VGE = 15 V
RG = 10 W
VCE = 0.8 V
CES
Note 3
Notes: 1. Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
2. Pulse test, t £ 300 ms, duty cycle £ 2 %
3. Switching times may increase for V
CE
(Clamp) > 0.8 • V
CES
, higher TJ or
increased RG.
IXSH 15N120B
IXST 15N120B
TO-247 AD (IXSH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-268AA (D3 PAK)
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
A
1
2.7 2.9 .106 .114
A2.02 .25 .001 .010
b 1.15 1.45 .045 .057
b
2
1.9 2.1 .75 .83
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E
1
13.3 13.6 .524 .535
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161
Min. Recommended Footprint
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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