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High V oltage IGBT
in High V oltage
ISOPLUS i4-P AC
TM
Advanced Technical Information
IXLF 19N220A
IXLF 19N250A
1
5
Features
●
High Voltage IGBT
- substitute for high voltage MOSFETs
with significantly lower voltage drop
and comparable switching speed
- substitute for high voltage thyristors
with voltage control of
turn on and turn off
- substitute for electromechanical
trigger and discharge relays
●
ISOPLUS i4-PAC
TM
high voltage package
- isolated back surface
- enlarged creepage towards heatsink
- enlarged creepage between high
voltage pins
- application friendly pinout
- high reliability
- industry standard outline
Applications
●
switched mode power supplies
●
DC-DC converters
●
resonant converters
●
laser generators, x ray generators
●
discharge circuits
IGBT
Symbol Conditions Maximum Ratings
V
CES
TVJ = 25°C to 150°C IXLF 19N220A 2200 V
IXLF 19N250A 2500 V
V
GES
±
20 V
I
C25
TC = 25°C 32 A
I
C90
TC = 90°C 19 A
I
CM
VGE = ±15 V; RG = 47 W; TVJ = 125°C 70 A
V
CEK
RBSOA, Clamped inductive load; L = 100 µH 1200 V
P
tot
TC = 25°C 250 W
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
V
CE(sat)
IC = 19 A; VGE = 15 V; TVJ = 25°C 3.2 3.9 V
TVJ = 125°C 4.7 V
V
GE(th)
IC = 1 mA; VGE = V
CE
58V
I
CES
V
CE
= V
CES; VGE
= 0 V; TVJ = 25°C 0.15 mA
TVJ = 125°C 0.2 mA
I
GES
VCE = 0 V; VGE = ± 20 V 500 nA
t
d(on)
200 ns
t
r
100 ns
t
d(off)
600 ns
t
f
50 ns
E
on
11 mJ
E
off
3.6 mJ
C
ies
VCE = 25 V; VGE = 0 V; f = 1 MHz 2.2 nF
Q
Gon
V
CE
= 800V; VGE = 15 V; IC = 19 A 130 nC
R
thJC
0.5 K/W
Inductive load, T
VJ
= 125°C
VCE = 1500 V; IC = 19 A
VGE = ±15 V; RG = 47 W
I
C25
= 32 A
V
CES
= 2200/2500 V
V
CE(sat)
= 3.2 V
t
f
= 50 ns