IXYS IXKR40N60C Datasheet
Advanced Technical Information
CoolMOS Power MOSFET
in ISOPLUS247TM Pack age
N-Channel Enhancement Mode
Low R
Package with Electrically Isolated Base
MOSFET
Symbol Conditions Maximum Ratings
V
DSS
V
GS
I
D25
I
D90
dv/dt VDS < V
E
AS
E
AR
Symbol Conditions Characteristic Values
R
DSon
V
GSth
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
F
R
thJC
DSon
, High V
MOSFET
DSS
TVJ = 25°C to 150°C 600 V
TC = 25°C 38 A
TC = 90°C 25 A
; IF ≤ 50A;diF/dt≤ 200A/µs 6 V/ns
DSS
TVJ = 150°C
ID = 10 A; L = 36 mH; TC = 25°C 1.8 J
ID = 20 A; L = 5 µH; TC = 25°C 1 mJ
(TVJ = 25°C, unless otherwise specified)
VGS = 10 V; ID = I
D90
VDS = 20 V; ID = 3 mA; 3.5 5.5 V
VDS = V
= 0 V; TVJ = 25°C 25 µA
DSS; VGS
TVJ = 125°C 60 µA
VGS = ±20 V; VDS = 0 V 100 nA
VGS= 10 V; VDS = 350 V; ID = 50 A
VGS= 10 V; VDS = 380 V;
ID = 25 A; RG = 1.8 Ω
(reverse conduction) IF = 20 A; VGS = 0 V 0.9 1.1 V
IXKR 40N60C
±20 V
min. typ. max.
70 mΩ
220 nC
55 nC
125 nC
30 ns
95 ns
100 ns
10 ns
0.45 K/W
V
DSS
600 V 38 A 70 m
ISOPLUS 247
I
D25
TM
R
DS(on)
ΩΩ
Ω
ΩΩ
E153432
G
D
Isolated base*
G = Gate D = Drain S = Source
* Patent pending
Features
●
ISOPLUS247 package with DCB Base
- Electrical isolation towards the heatsink
- Low coupling capacitance to the heatsink for
reduced EMI
- High power dissipation
- High temperature cycling capability
of chip on DCB
- JEDEC TO247AD compatible
- Easy clip assembly
●
fast CoolMOS power MOSFET - 2nd generation
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
●
Enhanced total power density
Applications
●
Switched mode power supplies (SMPS)
●
Uninterruptible power supplies (UPS)
●
Power factor correction (PFC)
●
Welding
●
Inductive heating
CoolMOS is a trademark of
Infineon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2001 IXYS All rights reserved
109
1 - 2
IXKR 40N60C
Component
ISOPLUS 247 OUTLINE ISOPLUS 247 OUTLINE
Symbol Conditions Maximum Ratings
V
ISOL
T
VJ
T
stg
T
L
F
C
I
≤ 1 mA; 50/60 Hz 2500 V~
ISOL
-40...+150 °C
-40...+125 °C
1.6 mm from case for 10 s 300 °C
mounting force with clip 20 ... 120 N
Symbol Conditions Characteristic Values
min. typ. max.
R
thCH
with heatsink compound 0.25 K/W
Weight 6g
Dim. Millimeter Inches
A 4.83 5.21 .190 .205
A
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Min. Max. Min. Max.
2.29 2.54 .090 .100
1
1.91 2.13 .075 .084
1
© 2001 IXYS All rights reserved
109
2 - 2
Loading...