IXYS IXKN40N60C Datasheet
Advanced Technical Information
CoolMOS Power MOSFET
IXKN 40N60C
N-Channel Enhancement Mode
Low R
Symbol Conditions Maximum Ratings
V
DSS
V
GS
I
D25
I
D90
E
AR
E
AS
dv/dt VDS £ V
P
D
T
J
T
JM
T
stg
V
ISOL
M
d
MOSFET
Symbol Conditions Characteristic Values
V
DSS
I
DSS
R
DS(on)
V
GS(th)
I
GSS
, High V
DSon
MOSFET
DSS
TJ= 25°C to 150°C 600 V
±20 V
TC= 25°C40A
TC= 90°C27A
ID = 20 A, L = 5 µH, TVJ = 25°C, repetitive 1 mJ
ID = 10 A, L = 36 mH, TVJ = 25°C, non repetitive 1.8 J
, IS = 47 A, diS/dt = 100 A/µs, TJ = T
DSS
JM
6 V/ns
TC= 25°C 290 W
-40 ... +150 °C
150 °C
-40 ... +150 °C
50/60 Hz, RMS I
£ 1 mA 2500 V~
ISOL
Mounting torque 1.5/13 Nm/lb.in.
Terminal connetion torque (M4) 1.5/13 Nm/lb.in.
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
VDS = 0.8 • V
V
VGS = 10 V, ID = 0.5 • I
V
= 0 V, ID = 1 mA 600 V
GS
= 0 V TJ = 125°C50 µA
GS
= VGS, ID = 2.5 mA 3.5 5.5 V
DS
DSS
D25
TJ = 25°C 0.5 25 µA
70 mW
VGS = ±20 VDC, VDS = 0 ±100 nA
V
DSS
I
D25
R
DS(on)
600 V 40 A 70 mW
miniBLOC, SOT-227 B
E72873
S
G
S
D
G = Gate D = Drain
S = Source
Either source terminal at miniBLOC can be used
as main or kelvin source
Features
●
miniBLOC package
- Electrically isolated copper base
- Low coupling capacitance to the heatsink for
reduced EMI
- High power dissipation due to AlN
ceramic substrate
- International standard package SOT-227
- Easy screw assembly
●
Fast CoolMOS power MOSFET
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
●
Enhanced total power density
Applications
●
Switched mode power supplies (SMPS)
●
Uninterruptible power supplies (UPS)
●
Power factor correction (PFC)
●
Welding
●
Inductive heating
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
CoolMOS is a trademark of
Infineon Technologies AG.
031
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IXKN 40N60C
Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
C
C
C
Q
Q
Q
t
t
t
t
R
R
fs
iss
oss
rss
g(on)
gs
gd
d(on)
r
d(off)
f
thJC
thCK
VDS= 10 V; ID = 0.5 • I
D25
30 S
8.8 nF
VGS = 0 V, VDS = 25 V, f = 1 MHz 3.15 nF
36 pF
220 nC
VGS = 10 V, VDS = 350 V, ID = I
D25
56 nC
123 nC
28 ns
VGS = 10 V, VDS = 350 V, ID = 0.5 • I
D25
95 ns
RG = 1.8 W (External) 100 ns
10 ns
0.05 K/W
0.43 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Conditions min. typ. max.
V
SD
t
rr
I
RM VR
IF = 0.5 • I
, VGS = 0 V 0.9 1.1 V
D25
IF = 47 A, -di/dt = 100 A/µs, 650 ns
= 350 V, TJ = 25°C 110 A
Package Characteristic Values
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 37.80 38.20 1.489 1.505
J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
V 3.30 4.57 0.130 0.180
W 0.780 0.830 19.81 21.08
Symbol Conditions min. typ. max.
Weight 30 g
© 2000 IXYS All rights reserved
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