IXYS IXKF40N60SCD1 Datasheet

Advanced Technical Information

IXKF 40N60SCD1

CoolMOS Power MOSFET

with Series Schottky Diode and
Ultra Fast Antiparallel Diode

in High Voltage ISOPLUS i4-PAC

MOSFET T

Symbol Conditions Maximum Ratings
V

DSS

V

GS

I

D25

I

D90

Symbol Conditions Characteristic Values

R

DSon

V

GSth

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

R

thJC

R

thJH

TVJ = 25°C to 150°C 600 V

TC = 25°C 38 A
TC = 90°C 25 A

(TVJ = 25°C, unless otherwise specified)

VGS = 10 V; ID = I

D90

VDS = 20 V; ID = 3 mA; 3.5 5.5 V
VDS = V

= 0 V; TVJ = 25°C 0.3 mA

DSS; VGS

TVJ = 125°C 0.5 mA

VGS = ±20 V; VDS = 0 V 100 nA

V

= 10 V; VDS = 350 V; ID = 50 A

GS

VGS= 10 V; VDS = 380 V;
ID = 25 A; RG = 1.8 Ω

with heat transfer paste 0.9 K/W

TM

±20 V

min. typ. max.

60 70 mΩ

220 nC

55 nC

125 nC

30 ns
95 ns

100 ns

10 ns

0.45 K/W

I

D25

V

DSS

R
t

rr

Features

• fast CoolMOS power MOSFET - 2nd
generation

- High blocking voltage

- Low on resistance

- Low thermal resistance due to reduced

• Series Schottky diode prevents current
flow through MOSFET’s body diode

- very low forward voltage

- fast switching

• Ultra fast HiPerFREDTM anti parallel diode

- low operating forward voltage

- fast and soft reverse recovery - low switching

• ISOPLUS i4-PACTM high voltage package

- isolated back surface

- low coupling capacity between pins and

- enlarged creepage towards heatsink

- enlarged creepage between high voltage

- application friendly pinout

- high reliability

- industry standard outline

Applications

Converters with

• circuit operation leading to current flow
through switches in reverse direction - e. g.

- phaseleg with inductive load

- resonant circuits

• high switching frequency

Examples

• switched mode power supplies (SMPS)

• uninterruptable power supplies (UPS)

• DC-DC converters

• welding converters

• converters for inductive heating

• drive converters

= 38 A
= 600 V
= 60 m

DSon

= 70 ns

chip thickness

losses

heatsink

pins

ΩΩ

Ω

ΩΩ

IXYS reserves the right to change limits, test conditions and dimensions.

© 2002 IXYS All rights reserved

CoolMOS is a trademark of

Infineon Technologies AG.

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IXKF 40N60SCD1

Series Schottky Diode D

S

Symbol Conditions Maximum Ratings
I

F25

I

F90

TC = 25°C 60 A
TC = 90°C 40 A

Symbol Conditions Characteristic Values

= 25°C, unless otherwise specified)

(T

V

F

R

thJC

R

thJH

IF = 20 A; TVJ = 25°C 0.9 V

TVJ = 125°C 0.7 V

with heat transfer paste 2.9 K/W

Anti Parallel Diode D

VJ

F

min. typ. max.

2 K/W

Symbol Conditions Maximum Ratings
I

F25

I

F90

TC = 25°C 32 A
TC = 90°C 16 A

Symbol Conditions Characteristic Values

= 25°C, unless otherwise specified)

(T

VJ

min. typ. max.

Dimensions in mm (1 mm = 0.0394")

V

F

I

RM

t

rr

R

thJC

R

thJH

IF = 20 A; TVJ = 25°C 2.1 2.5 V

TVJ = 125°C 1.4 V

IF = 30 A; diF/dt = -500 A/µs; TVJ = 125°C 15 A
VR = 600 V; VGE = 0 V 70 ns

1.3 K/W

with heat transfer paste 2.6 K/W

Component

Symbol Conditions Maximum Ratings
V

ISOL

T

VJ

T

stg

F

C

I

≤ 1 mA; 50/60 Hz 2500 V~

ISOL

-40...+150 °C

-40...+125 °C

mounting force with clip 20 ... 120 N

Symbol Conditions Characteristic Values

min. typ. max.

C

p

dS, d
dS, d

A
A

coupling capacity between shorted pins
and mounting tab in the case 40 pF

D pin - S pin 7 mm
pin - backside metal 5.5 mm

Weight 9g

© 2002 IXYS All rights reserved

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