IXYS IXKC40N60C Datasheet
ADVANCE TECHNICAL INFORMATION
CoolMOS Power MOSFET
ISOPLUS220
Electrically Isolated Back Surface
TM
IXKC 40N60C
V
I
R
N-Channel Enhancement Mode
Low R
Symbol Test Conditions Maximum Ratings
V
DSS
V
GS
I
D25
I
D90
I
D(RMS)
E
AS
E
AR
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
F
C
Weight 3g
, High Voltage,, MOSFET
DS(on)
T
= 25°C to 150°C 600 V
J
Continuous ±20 V
T
= 25°C; Note 1 28 A
C
T
= 90°C, Note 1 19 A
C
Package lead current limit 45 A
I
= 10A, T
o
I
= 20A 1 mJ
o
T
= 25°C 250 W
C
= 25°C 690 mJ
C
-55 ... +150 °C
150 °C
-55 ... +125 °C
1.6 mm (0.062 in.) from case for 10 s 300 °C
RMS leads-to-tab, 50/60 Hz, t = 1 minute 2500 V~
Mounting force 11 ... 65 / 2.4 ...11 N/lb
ISOPLUS 220
G = Gate, D = Drain,
S = Source
* Patent pending
Features
l Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
ND
l 2
generation CoolMOS power MOSFET
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped inductive
switching (UIS)
l Low thermal resistance due to reduced
chip thickness
l Low drain to tab capacitance(<30pF)
DSS
D25
DS(on)
G
D
S
= 600 V
= 28 A
= 96 m
TM
Isolated back surface*
ΩΩ
Ω
ΩΩ
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
R
DS(on)
V
GS(th)
I
DSS
I
GSS
© 2001 IXYS All rights reserved
VGS= 10 V, ID = I
= 10 V, ID = I
V
GS
VDS= VGS, ID = 2 mA 3.5 5.5 V
VDS= V
DSS
= 0 V T
V
GS
V
= ±20 V
GS
J
, Note 3 80 96 mΩ
D90
, Note 3 T
D90
, V
= 0 ±200 nA
DC
DS
= 125°C 230 mΩ
J
T
= 25°C2µA
J
= 125°C20µA
J
min. typ. max.
Applications
l Switched Mode Power Supplies (SMPS)
l Uninterruptible Power Supplies (UPS)
l Power Factor Correction (PFC)
l Welding
l Inductive Heating
Advantages
l Easy assembly: no screws or isolation
foils required
l Space savings
l High power density
COOLMOS is a trademark of Infineon
Technolgy
98847 (6/01)
IXKC 40N60C
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
Q
Q
Q
t
t
t
t
R
R
g(on)
gs
gd
d(on)
r
d(off)
f
thJC
thCH
J
VGS= 10 V, VDS = 350 V, ID = 40 A 42 nC
VGS= 10 V, VDS = 380V 55 ns
ID = 40 A, R
= 1.8 Ω 60 ns
G
min. typ. max.
158 nC
92 nC
20 ns
10 ns
0.5 K/W
0.30 K/W
Reverse Correction Characteristic Values
(T
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
V
SD
IF = 20 A, VGS = 0 V 0.8 1.2 V
Note 3
J
Note: 1. MOSFET chip capability
2. Intrinsic diode capability
3. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
ISOPLUS220 OUTLINE
Note: All terminals are solder plated.
1 - Gate
2 - Drain
3 - Source
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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