IXYS IXKC25N80C Datasheet
© 2001 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
V
DSS
TJ= 25°C to 150°C 800 V
V
GS
Continuous ±20 V
I
D25
TC= 25°C; Note 1 25 A
I
D90
TC= 90°C, Note 1 18 A
I
D(RMS)
Package lead current limit 45 A
E
AS
ID= 4A, TC = 25°C 670 mJ
E
AR
ID= 10A 0.5 mJ
dv/dt V
DS
< V
DSS
, IF ≤ 17 A, T
VJ
= 150°C 6 V/ns
dS/dt = 100 A/µs
P
D
TC= 25°C 250 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +125 °C
T
L
1.6 mm (0.062 in.) from case for 10 s 300 °C
V
ISOL
RMS leads-to-tab, 50/60 Hz, t = 1 minute 2500 V~
F
C
Mounting force 11 ... 65 / 2.4 ...11 N/lb
Weight 3 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
R
DS(on)
VGS= 10 V, ID = I
D90
, Note 3 125 150 mΩ
VGS= 10 V, ID = I
D90
, Note 3 TJ = 125°C 280 mΩ
V
GS(th)
VDS= VGS, ID = 2 mA 2 4 V
I
DSS
VDS= V
DSS
TJ = 25°C50µA
VGS= 0 V TJ = 125°C 250 µA
I
GSS
VGS= ±20 VDC, VDS = 0 ±200 nA
G = Gate, D = Drain,
S = Source
* Patent pending
V
DSS
= 800 V
I
D25
= 25 A
R
DS(on)
= 150 m
ΩΩ
ΩΩ
Ω
98866 (11/01)
ADVANCE TECHNICAL INFORMATION
ISOPLUS 220
TM
Features
l Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l 3
RD
generation CoolMOS power MOSFET
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped inductive
switching (UIS)
l Low thermal resistance due to reduced
chip thickness
l Low drain to tab capacitance(<30pF)
Applications
l Switched Mode Power Supplies (SMPS)
l Uninterruptible Power Supplies (UPS)
l Power Factor Correction (PFC)
l Welding
l Inductive Heating
Advantages
l Easy assembly: no screws or isolation
foils required
l Space savings
l High power density
G
D
S
Isolated back surface*
CoolMOS Power MOSFET
ISOPLUS220
TM
Electrically Isolated Back Surface
N-Channel Enhancement Mode
Low R
DS(on)
, High Voltage MOSFET
IXKC 25N80C
COOLMOS is a trademark of Infineon
Technology.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Q
g(on)
166 nC
Q
gs
VGS= 10 V, VDS = 640 V, ID = 35 A 18 nC
Q
gd
84 nC
t
d(on)
25 ns
t
r
VGS= 10 V, VDS = 640V 15 ns
t
d(off)
ID = 35 A, RG = 2.2 Ω 75 ns
t
f
10 ns
R
thJC
0.5 K/W
R
thCH
0.30 K/W
Reverse Conduction Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
V
SD
IF = 12.5 A, VGS = 0 V 1 1.2 V
Note 3
Note: 1. MOSFET chip capability
2. Intrinsic diode capability
3. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Note: All terminals are solder plated.
1 - Gate
2 - Drain
3 - Source
ISOPLUS220 OUTLINE
IXKC 25N80C
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