IXYS IXKC 13N80C Service Manual
ADVANCE TECHNICAL INFORMATION
CoolMOS Power MOSFET
ISOPLUS220
TM
IXKC 13N80C
Electrically Isolated Back Surface
N-Channel Enhancement Mode
Low R
Symbol Test Conditions Maximum Ratings
V
DSS
V
GS
I
D25
I
D90
I
D(RMS)
E
AS
E
AR
dv/dt V
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
F
C
Weight 2 g
, High Voltage MOSFET
DS(on)
TJ= 25°C to 150°C 800 V
Continuous ±20 V
TC= 25°C; Note 1 13 A
TC= 90°C, Note 1 9 A
Package lead current limit 45 A
ID= 4A, TC = 25°C 670 mJ
ID= 10A 0.5 mJ
< V
DS
dS/dt = 100 A/µs
, IF ≤ 17 A, T
DSS
= 150°C 6 V/ns
VJ
TC= 25°C 125 W
-55 ... +150 °C
150 °C
-55 ... +125 °C
1.6 mm (0.062 in.) from case for 10 s 300 °C
RMS leads-to-tab, 50/60 Hz, t = 1 minute 2500 V~
Mounting force 11 ... 65 / 2.4 ...11 N/lb
V
DSS
I
D25
R
DS(on)
ISOPLUS 220
G
D
S
G = Gate, D = Drain,
S = Source
* Patent pending
= 800 V
= 13 A
= 290 m
TM
Isolated back surface*
ΩΩ
Ω
ΩΩ
Features
l Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
RD
l 3
generation CoolMOS power MOSFET
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped inductive
switching (UIS)
l Low thermal resistance due to reduced
chip thickness
l Low drain to tab capacitance(<30pF)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
R
DS(on)
V
GS(th)
I
DSS
I
GSS
© 2001 IXYS All rights reserved
VGS= 10 V, ID = I
VGS= 10 V, ID = I
, Note 3 250 290 mΩ
D90
, Note 3 TJ = 125°C 550 mΩ
D90
VDS= VGS, ID = 1 mA 2 4 V
VDS= V
VGS= 0 V TJ = 125°C 125 µA
DSS
TJ = 25°C25µA
VGS= ±20 VDC, VDS = 0 ±100 nA
Applications
l Switched Mode Power Supplies (SMPS)
l Uninterruptible Power Supplies (UPS)
l Power Factor Correction (PFC)
l Welding
l Inductive Heating
Advantages
l Easy assembly: no screws or isolation
foils required
l Space savings
l High power density
COOLMOS is a trademark of Infineon
Technology.
98865 (11/01)
IXKC 13N80C
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Q
Q
Q
t
d(on)
t
r
t
d(off)
t
f
R
R
g(on)
gs
gd
thJC
thCH
VGS= 10 V, VDS = 640 V, ID = 17 A 9 nC
VGS= 10 V, VDS = 640V 15 ns
ID = 17 A, RG = 4.7 Ω 75 ns
83 nC
42 nC
25 ns
10 ns
1.0 K/W
0.30 K/W
Reverse Conduction Characteristic Values
= 25°C, unless otherwise specified)
(T
Symbol Test Conditions min. typ. max.
V
SD
IF = 6.5 A, VGS = 0 V 1 1.2 V
Note 3
J
ISOPLUS220 OUTLINE
Note: 1. MOSFET chip capability
2. Intrinsic diode capability
3. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Note: All terminals are solder plated.
1 - Gate
2 - Drain
3 - Source
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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