IXYS IXGX50N60AU1, IXGX50N60AU1S Service Manual
查询IXGX50N60AU1供应商
Preliminary data
HiPerFAST
IGBT with Diode I
TM
IXGX50N60AU1
IXGX50N60AU1S
V
C25
V
Combi Pack t
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA V
(RBSOA) Clamped inductive load, L = 30 µH @ 0.8 V
P
C
T
J
T
JM
T
stg
Weight 6g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
TJ= 25°C to 150°C 600 V
TJ= 25°C to 150°C; RGE = 1 MΩ 600 V
Continuous ±20 V
Transient ±30 V
TC= 25°C, limited by leads 75 A
TC= 90°C50A
TC= 25°C, 1 ms 200 A
= 15 V, TVJ = 125°C, RG = 10 Ω ICM = 100 A
GE
CES
TC= 25°C 300 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
fi
TO-247 Hole-less SMD
(50N60AU1S)
TO-247 Hole-less
(50N60AU1)
G = Gate, C = Collector,
E = Emitter, TAB = Collector
Features
l
Hole-less TO-247 for clip mount
l
High current capability
l
High frequency IGBT and antiparallel FRED in one package
l
Low V
- for minimum on-state conduction
l
MOS Gate turn-on
- drive simplicity
l
Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low I
CES
CE(sat)
G
CE(sat)
losses
= 600 V
= 75 A
= 2.7 V
= 275 ns
G
E
C
C (TAB)
C (TAB)
RM
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
© 1997 IXYS All rights reserved
IC= 500 µA, VGE = 0 V 600 V
IC= 500 µA, VCE = V
VCE= 0.8 • V
= 0 V TJ = 125°C15mA
V
GE
VCE= 0 V, VGE = ±20 V ±100 nA
IC= I
, VGE = 15 V 2.7 V
C90
CES
J
GE
TJ = 25°C 250 µA
min. typ. max.
2.5 5.5 V
Applications
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
l
Uninterruptible power supplies (UPS)
l
Switch-mode and resonant-mode
power supplies
Advantages
l
Space savings (two devices in one
package)
l
Reduces assembly time and cost
l
High power density
97513 (5/97)
IXGX50N60AU1 IXGX50N60AU1S
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
g
fs
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
J
IC= I
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
IC = I
Inductive load, TJ = 25
= I
I
C
V
CE
; VCE = 10 V, 25 35 S
C90
, VGE = 15 V, VCE = 0.5 V
C90
, VGE = 15 V, L = 100 µH,
C90
= 0.8 V
, RG = R
CES
off
°°
°C
°°
= 2.7 Ω
CES
Remarks: Switching times may increase
(Clamp) > 0.8 • V
for V
CE
increased R
G
Inductive load, T
I
= I
, VGE = 15 V, L = 100 µH
C
C90
V
CE
= 0.8 V
, RG = R
CES
= 125
J
, higher TJ or
CES
°°
°C
°°
= 2.7 Ω
off
Remarks: Switching times may increase
(Clamp) > 0.8 • V
for V
CE
increased R
G
, higher TJ or
CES
min. typ. max.
200 nC
50 nC
80 nC
50 ns
210 ns
200 ns
275 400 ns
4.8 mJ
50 ns
240 ns
3mJ
280 ns
600 ns
9.6 mJ
0.42 K/W
0.15 K/W
TO-247 HOLE-LESS
TO-247 HOLE-LESS SMD
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
IF = I
V
F
I
RM
t
rr
R
thJC
, VGE = 0 V, 1.7 V
C90
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IF = I
, VGE = 0 V, -diF/dt = 480 A/µs1933A
C90
VR = 360 V TJ =125 °C 175 ns
I
= 1 A; -di/dt = 200 A/µs; VR = 30 V TJ =25°C35 50ns
F
0.75 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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